ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MODULE 1200V 55A 208W SP3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 35A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：55 A
- Power - Max：208 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：2.5 nF @ 25 V
Download product information
Overview
The APTGT35H120T3G is a single IGBT module manufactured by Microchip Technology, designed for high-power switching applications. It features a collector-emitter maximum voltage (VCEO) of 1.2 kV and a continuous collector current of 75 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.05 V and a power dissipation rating of 250 W. Operating within a junction temperature range of -40°C to +150°C, it utilizes a screw-mount installation style in an SP3-32 package. The gate-emitter leakage current is specified at 120 nA, with a maximum gate-emitter voltage of 20 V.
Feature Summary
- Single configuration IGBT module optimized for robust power switching
- High thermal stability supporting operation up to 150°C junction temperature
- Integrated anti-parallel diode functionality within the SP3-32 package
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix 'T3G' against official Microchip documentation to confirm tape-and-reel packaging and RoHS compliance status. Cross-reference the SP3-32 package dimensions with mechanical drawings prior to PCB or heatsink design. Ensure gate drive voltage limits do not exceed the specified 20 V maximum to prevent device degradation.
Selection Notes
Select this component when a single-switch topology with 1.2 kV blocking capability is required. The 75 A continuous current rating suits moderate power levels where screw-mount thermal management is feasible. Compare the 2.05 V saturation voltage against alternative packages to evaluate conduction losses relative to system efficiency targets.
Part Context
This part belongs to the APTGT series of insulated gate bipolar transistors from Microchip Technology. The series typically combines trench field-stop IGBT technology with fast recovery diodes. The SP3-32 package provides a standardized footprint for industrial power electronics, facilitating replacement in existing designs requiring 1.2 kV isolation.
Replacement Considerations
Direct pin-to-pin replacements may include other Microchip APTGT variants with matching voltage and current ratings in the SP3-32 package. Verify thermal resistance characteristics and switching speeds when substituting with modules from different manufacturers to ensure circuit stability.
