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The APTGT400A120D3G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 500 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 400 nA. Rated for a power dissipation of 1.25 kW, it operates within a temperature range of -40°C to +125°C. The component is housed in a D3-11 package with screw mount installation style and a maximum gate-emitter voltage of 20 V.
Verify the specific part number against official Microchip Technology documentation to ensure compatibility with system requirements. Confirm that the D3-11 package dimensions and screw mounting specifications align with the intended heatsink design. Check for any recent product change notices or lifecycle status updates directly from the manufacturer before finalizing procurement plans.
Select this component based on its 600 V blocking capability and 500 A current handling capacity. Ensure the application environment remains within the specified -40°C to +125°C operating temperature range. Verify that the gate drive circuitry supports the required 20 V maximum gate-emitter voltage limit to prevent device damage during operation.
This module belongs to the APTGT series of IGBT modules from Microchip Technology. It is part of a family of power semiconductor devices designed for efficient energy conversion. The D3-11 packaging standard facilitates integration into various industrial power electronics architectures requiring reliable high-current switching.
Consult official Microchip Technology substitution guides for verified alternative part numbers. Ensure any replacement maintains identical electrical ratings, package footprint, and thermal characteristics to guarantee system compatibility without redesign.