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The APTGT400U170D4G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 1.1 kA at 25°C. The saturation voltage is specified at 2 V, with a power dissipation capability of 2.9 kW. The device operates within a temperature range of -40°C to +125°C and includes a gate-emitter leakage current of 400 nA. It is housed in a D4-5 screw-mount package.
Verify the specific datasheet revision and product change notifications prior to ordering. Confirm that the D4-5 package dimensions match the mechanical constraints of the target design. Ensure that the gate drive circuitry supports the required voltage levels and current sourcing capabilities for reliable switching performance.
Select this component when high voltage and high current are required in a single configuration. Compare the 1.7 kV rating against system voltage peaks to ensure adequate margin. Evaluate the 1.1 kA current rating against load requirements and derating curves for the intended operating temperature range.
This part belongs to the PM-IGBT-TFS-D4 series of modules. It represents a high-power discrete solution designed for demanding industrial environments. The D4-5 package provides a standardized form factor for mounting on heatsinks, facilitating integration into larger power conversion systems.
Check for direct pin-compatible alternatives within the same D4-5 package family. Verify that any substitute maintains the 1.7 kV voltage rating and comparable current handling capabilities. Ensure thermal resistance characteristics are similar to maintain existing cooling solutions.