APTGT50DU170TG

Overview

The APTGT50DU170TG is a silicon IGBT power module manufactured by Microchip Technology, formerly part of the Microsemi product line. It features a dual common emitter configuration housed in an SP6C package. The device supports a maximum collector-emitter voltage (VCEO) of 1.7 kV and delivers a continuous collector current of 385 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 150 nA, and a maximum power dissipation of 1.034 kW. The module operates within a junction temperature range of -40°C to +175°C and utilizes screw mount installation.

Feature Summary

• High-voltage capability with 1.7 kV blocking voltage for robust operation in demanding power environments.
• High-current handling capacity of 385 A continuous collector current suitable for heavy-duty applications.
• Wide operating temperature range extending up to +175°C junction temperature for thermal resilience.

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Induction heating systems

Procurement Notes

Verify the manufacturer designation carefully, as the component is currently listed under Microchip Technology following corporate acquisitions. Confirm the specific suffix 'TG' matches the required RoHS compliance and material specifications for your assembly process. Cross-reference the SP6C package dimensions with your PCB or heatsink design to ensure mechanical compatibility before finalizing orders.

Selection Notes

Select this module when designing circuits requiring high voltage isolation combined with significant current throughput. The 1.7 V saturation voltage offers a balance between conduction losses and switching performance. Ensure the cooling solution can manage the 1.034 kW power dissipation effectively, particularly given the high current density inherent in the SP6C form factor.

Part Context

This component belongs to the APTGT series of insulated gate bipolar transistor modules from Microchip Technology. The series is designed for general-purpose industrial power conversion applications. The specific model integrates trench field-stop technology to optimize switching characteristics while maintaining high reliability in standard silicon-based power electronics architectures.

Replacement Considerations

Direct replacements should be sought within the APTGT series or compatible Microchip IGBT modules sharing the SP6C package and 1.7 kV rating. Verify pinout compatibility and thermal resistance values against datasheets of potential substitutes to ensure equivalent performance without redesigning the host system.