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The APTGT50H60T3G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP3-32 screw-mount package. It features a full bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 176 W. Operating within a temperature range of -40°C to +100°C, it includes a gate-emitter leakage current of 600 nA and a maximum gate-emitter voltage of 20 V.
Verify the specific suffix T3G against official Microchip documentation to confirm pinout compatibility and internal component specifications. Ensure that the SP3-32 package dimensions align with the target heatsink interface before integration. Cross-reference the latest datasheet revision to confirm RoHS compliance status and any recent product change notifications affecting performance characteristics.
Select this module for applications requiring a 600 V rating and 80 A continuous current capability in a full bridge topology. The SP3-32 package offers a balance of thermal performance and mounting simplicity via screw installation. Consider the 1.5 V saturation voltage for conduction loss calculations and ensure the cooling system can handle the 176 W power dissipation rating under worst-case operating conditions.
This component belongs to the APTGT50 series of trench field-stop IGBT modules from Microchip Technology. It shares the same electrical ratings as variants like APTGT50H60RT3G but differs in packaging and internal configuration details. The series is designed for high-efficiency power switching applications where reliable operation at 600 V is required.
APTGT50H60RT3G is a related variant within the same series. Verify if the RT3G suffix indicates a different internal configuration or packaging requirement compared to the T3G version before substitution.