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Product Detailed Parameters
- Description：IGBT MODULE 1700V 75A 312W SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP1
- Supplier Device Package：SP1
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：312 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：4.4 nF @ 25 V
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Overview
The APTGT50SK170T1G is a single IGBT power module manufactured by Microchip Technology, utilizing silicon trench field-stop technology. It features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 75 A at 25°C. The saturation voltage (VCE(sat)) is specified at 2 V. The module supports a maximum power dissipation of 312 W and operates within a junction temperature range of -40°C to +100°C. Key electrical parameters include a gate-emitter leakage current of 400 nA and a maximum gate-emitter voltage of ±20 V. It employs screw mount installation in the SP4 package.
Feature Summary
- Single configuration IGBT module designed for high-voltage applications
- Utilizes trench field-stop technology for efficient power switching
- Robust thermal performance with a maximum power dissipation of 312 W
- Wide operating temperature range suitable for demanding industrial environments
Applications
- High-voltage motor drives
- Industrial inverters
- Uninterruptible power supplies (UPS)
- Welding equipment
Procurement Notes
Verify the specific suffix T1G against official Microchip documentation to confirm pinout and packaging details. Ensure compatibility with existing thermal management solutions given the 312 W dissipation rating. Confirm RoHS compliance status through the manufacturer's latest datasheet or product change notifications before finalizing procurement plans.
Selection Notes
Select this component for applications requiring a 1.7 kV rated single IGBT with moderate current handling capabilities. Compare the 75 A continuous current rating against peak load requirements. Evaluate the SP4 package dimensions for mechanical fit. Consider the 2 V saturation voltage impact on conduction losses relative to alternative modules in the same voltage class.
Part Context
This part belongs to the Microchip APTGT series of IGBT modules, which are based on trench field-stop technology. The series offers various configurations including single, dual, and bridge modules. The APTGT50SK170T1G specifically targets high-voltage applications where reliability and efficiency are critical, leveraging Microchip's expertise in power semiconductor manufacturing.
Replacement Considerations
Direct substitutes may include other 1.7 kV single IGBT modules from Microchip or competitors with similar current ratings and package types. Verify pin-to-pin compatibility and thermal characteristics. Cross-reference with the APTGT50SK170TG if the suffix difference denotes a specific packaging or revision change confirmed by the manufacturer.
