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The APTGT75DA120TG is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 75 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a gate-emitter leakage current of 400 nA. Power dissipation is rated at 277 W. It operates within a temperature range of -40°C to +100°C and uses an SP4 package with screw mount installation.
Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors before procurement. Confirm that the SP4 package dimensions and thermal characteristics align with your heatsink design requirements. Ensure compliance with RoHS directives as specified in the official documentation. Cross-reference the part number against the latest product change notices to avoid obsolete variants.
Select this component when a single-switch IGBT solution with 1.2 kV blocking capability and 75 A continuous current rating is required. The SP4 package offers a compact form factor suitable for space-constrained designs. Consider the 277 W power dissipation rating relative to your thermal management strategy. Verify that the operating temperature range meets the environmental conditions of the target application.
This module belongs to the APTGT series of IGBT modules from Microchip Technology. The series typically includes various configurations and voltage ratings for power electronics applications. The SP4 package is a standard housing for these types of discrete power modules, facilitating easy integration into existing PCB or chassis layouts.