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The APTGT75H60T3G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP3-32 package. It features a full bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 100 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 600 nA. Power dissipation is rated at 250 W, with a maximum gate-emitter voltage of 20 V. Operating temperatures range from -40°C to +100°C, and it utilizes screw mount installation.
Verify the specific revision suffix and manufacturing date code against the latest Microchip Technology datasheet before procurement. Confirm that the SP3-32 package dimensions match the target PCB layout and heatsink interface requirements. Ensure compliance with RoHS directives as specified in the official documentation.
Select this component when a 600 V full bridge topology is required with 100 A continuous current capability. Consider the 250 W power dissipation rating and the -40°C to +100°C operating temperature range for thermal design. Verify compatibility with standard screw mounting techniques and appropriate gate drive voltages within the 20 V limit.
This part belongs to the Microchip Technology APTGT series of IGBT modules, which utilize trench field-stop technology. The series offers various configurations including single, half-bridge, and full bridge options in standardized packages like SP3. These modules are designed for robust performance in medium-power industrial applications requiring reliable switching characteristics.
Consult Microchip Technology's official cross-reference guides or distributor databases for verified substitute part numbers. Ensure any replacement maintains identical voltage, current, and package specifications.