APTGT75TA120PG

Overview

The APTGT75TA120PG is a triple phase leg power module utilizing Fast Trench + Field Stop IGBT3 technology. It features a SP6-P isolated package with screw mounting and a low 12mm profile. The device supports a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 100 A at 25°C, reducing to 75 A at 80°C. Maximum power dissipation is rated at 350 W at 25°C. The junction temperature range spans from -40°C to 150°C, with an operating case temperature limit of 100°C. Isolation voltage between terminals and the case is 4000 V RMS.

Feature Summary

• Fast Trench + Field Stop IGBT3 Technology for low voltage drop and switching frequency up to 20 kHz
• Kelvin emitter configuration for easy drive and very low stray inductance design
• Soft recovery parallel diodes with low forward voltage and leakage current
• High integration allowing individual legs to be paralleled or configured as a three-phase bridge

Applications

• Welding converters
• Switched Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• Motor control systems

Procurement Notes

Verify component authenticity through authorized Microchip distributors. Confirm RoHS compliance status and check for specific revision markings on the package. Ensure proper electrostatic discharge handling procedures are followed during storage and installation. Validate thermal interface material compatibility for the SP6-P package mounting requirements.

Selection Notes

Select this module for applications requiring high current density in a compact form factor. The positive temperature coefficient of VCEsat facilitates easy paralleling for higher current capabilities. Consider the 12mm profile for space-constrained designs. Verify gate resistance values against the specified 4.7Ω test conditions for optimal switching performance.

Part Context

This component belongs to the APTGT series of triple phase leg modules from Microchip Technology. It utilizes the IGBT3 generation technology, combining trench gate and field stop structures. The SP6-P package provides electrical isolation and direct heatsink mounting capability, distinguishing it from standard discrete transistor packages.

Replacement Considerations

Direct replacements must match the 1200V/100A rating and SP6-P package dimensions. Verify pinout compatibility and thermal resistance characteristics. Cross-reference with other IGBT3 technology modules from the same manufacturer family for equivalent switching speeds and saturation voltages.

FAQ

What is the maximum switching frequency supported by this module?

The module supports switching frequencies up to 20 kHz when utilizing the Fast Trench + Field Stop IGBT3 technology.

How does the module facilitate easy paralleling?

The module exhibits a positive temperature coefficient of VCEsat, which allows for stable current sharing when multiple legs are paralleled to achieve higher current capabilities.

What is the isolation voltage rating of the SP6-P package?

The RMS isolation voltage between any terminal and the case is rated at 4000 V for a duration of 1 minute at 50/60 Hz.