APTGTQ200DA65T3G

Overview

The APTGTQ200DA65T3G is a single IGBT module manufactured by Microchip Technology using silicon technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 200 A at 25°C. The device has a collector-emitter saturation voltage of 1.65 V, a gate-emitter leakage current of 480 nA, and a power dissipation rating of 483 W. It operates within a temperature range of -40°C to +125°C, utilizes an SP3F package with screw mount installation, and has a unit weight of 110 g.

Feature Summary

• Single configuration IGBT module designed for high-power conversion
• SP3F package format enabling screw mount installation
• Silicon-based construction supporting wide operating temperatures

Applications

• Boost chopper circuits in power conversion systems
• Industrial motor drive applications
• Uninterruptible power supply (UPS) inverters

Procurement Notes

Verify the specific ordering suffix T3G against official Microchip documentation to confirm package variant and tape-and-reel specifications. Ensure thermal interface material compatibility with the SP3F baseplate for adequate heat dissipation. Confirm that the required gate drive voltage does not exceed the 20 V maximum rating. Validate that the application current remains within the 200 A continuous limit at the intended operating temperature.

Selection Notes

Select this component when a single-switch topology is required for 650 V DC bus applications. The SP3F package offers a balance of current handling and thermal performance for medium-power designs. Consider the 1.65 V saturation voltage for efficiency calculations in low-voltage drop requirements. Evaluate the 483 W power dissipation capability against the system's thermal management strategy to ensure reliable operation under load.

Part Context

This part belongs to the APTGT series of IGBT modules from Microchip Technology. It is categorized under discrete and power modules, specifically designed for robust industrial environments. The module integrates a single IGBT die within a standardized power packaging format, facilitating integration into larger power electronic assemblies requiring high reliability and proven silicon technology.

Replacement Considerations

Direct substitutes include other single IGBT modules in the SP3F package with comparable 650V/200A ratings, such as the APTGTQ200SK65T3G. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference datasheets for switching characteristics to ensure circuit stability.