APTGTQ200SK65T3G

Overview

The APTGTQ200SK65T3G is a single IGBT power module manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 200 A at 25°C. The device has a collector-emitter saturation voltage of 1.65 V and a power dissipation rating of 483 W. It operates within a temperature range of -40°C to +125°C. The module uses the SP3F package with screw mount installation style and utilizes Silicon technology.

Feature Summary

• Single IGBT configuration for dedicated switching applications
• SP3F package design optimized for thermal management
• Screw mount installation for secure mechanical attachment

Applications

• Industrial motor drives
• Uninterruptible power supplies
• Inverter circuits

Procurement Notes

Verify the specific ordering suffix T3G against official Microchip documentation to confirm packaging and material compliance details. Confirm that the SP3F package dimensions match the target heatsink interface requirements before integration into the final assembly design.

Selection Notes

Select this component when a single switch rated for 650 V and 200 A is required. Ensure the application can accommodate the 1.65 V saturation voltage drop and the 483 W power dissipation limit under the expected thermal conditions. Verify that the operating junction temperature remains within the specified -40°C to +125°C range.

Part Context

This part belongs to the Microchip APTGTQ series of IGBT modules. It shares the SP3F package form factor with other variants in the lineup, such as higher voltage models, allowing for potential mechanical compatibility across different electrical specifications within the same product family.

Replacement Considerations

Direct substitutes must match the 650 V rating, 200 A current capacity, and SP3F package. Verify pinout compatibility and thermal characteristics before replacing.