APTGX300A120D3G

Overview

The APTGX300A120D3G is a silicon IGBT power module manufactured by Microchip Technology. It features a dual configuration housed in the D3-11 screw-mount package. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 415 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter leakage current of 200 nA, and a power dissipation rating of 1.02 kW. The module operates within a temperature range of -40°C to +125°C with a maximum gate-emitter voltage of 20 V.

Feature Summary

• Dual common emitter configuration for bridge circuit applications
• High-speed IGBT4 technology designed for low conduction and switching losses
• Robust thermal management capabilities via screw-mount mounting style

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Induction heating systems

Procurement Notes

Verify component authenticity through authorized Microchip distributors or certified suppliers. Confirm RoHS compliance status and check for recent Product Change Notifications (PCN) regarding manufacturing site or material updates. Ensure storage conditions meet moisture sensitivity level requirements before assembly to prevent package damage during soldering processes.

Selection Notes

Select this module for high-power applications requiring 1.2 kV blocking capability and over 400 A current handling. Compare the 1.8 V saturation voltage against system efficiency targets. Verify that the D3-11 package dimensions fit the mechanical design constraints. Ensure the gate drive circuit can handle the specified 20 V maximum limit safely.

Part Context

This part belongs to the Microchip APTGT/APTGX series of high-performance IGBT modules. These components are engineered for demanding power conversion environments. The D3-11 packaging standardizes thermal interface dimensions across various voltage ratings within the product family, facilitating modular design reuse in industrial power electronics platforms.

Replacement Considerations

Direct pin-compatible substitutes within the same D3-11 form factor should be evaluated based on matching voltage and current ratings. Cross-reference specific switching characteristics and thermal resistance values to ensure equivalent performance in existing thermal designs without modifying the host PCB layout.