APTGX600A170T6G

Overview

The APTGX600A170T6G is a dual IGBT power module from Microchip Technology, utilizing silicon technology and the SP6C package. It features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 750 A at 25°C. The saturation voltage is 1.7 V, with a gate-emitter leakage current of 200 nA. Power dissipation is rated at 1.948 kW, operating within a temperature range of -40°C to +175°C.

Feature Summary

• Dual configuration for high-power switching applications
• High thermal stability with operation up to 175°C junction temperature
• Low saturation voltage for efficient power conversion
• Robust 1.7 kV blocking capability

Applications

• Industrial motor drives
• Uninterruptible power supplies
• High-frequency inverters

Procurement Notes

Verify component authenticity through authorized Microchip distributors or certified partners. Confirm RoHS compliance status via official datasheets before integration. Ensure supply chain reliability by checking current production lifecycle status and regional availability constraints directly with the manufacturer.

Selection Notes

Select this module for applications requiring high current density and robust voltage handling in compact spaces. The SP6C package offers screw-mount convenience. Evaluate thermal management requirements against the 1.948 kW dissipation rating. Ensure gate drive compatibility with standard IGBT control signals.

Part Context

This component belongs to Microchip's high-speed IGBT4 series, designed for demanding power electronics environments. It represents an evolution in silicon-based power modules, focusing on reduced switching losses and improved efficiency compared to previous generations.

FAQ

What is the maximum junction temperature?

The maximum operating junction temperature is +175°C.

Is this module single or dual configured?

It is a dual configuration IGBT module.

What is the package type?

The module uses the PM-IGBT-TFS-SP6C package.