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Product Detailed Parameters
- Description：PM-IGBT-TFS-SP6C
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Dual, Common Emitter
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 600A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：805 A
- Power - Max：1.923 kW
- Current - Collector Cutoff (Max)：50 µA
- Input Capacitance (Cies) @ Vce：120000 pF @ 25 V
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Overview
The APTGX600DU120T6G is a dual common emitter IGBT power module utilizing Trench 7 silicon technology. It operates at a collector-emitter voltage of 1200 V with a maximum continuous collector current of 805 A at 25°C. The device features a low saturation voltage of 1.55 V and a gate-emitter leakage current of 400 nA. Power dissipation capability is rated at 1.923 kW. It employs the SP6C package configuration for screw mounting.
Feature Summary
- Incorporates Trench 7 IGBT technology to achieve low voltage drop and minimal leakage current.
- Designed with very low stray inductance characteristics for high-speed switching applications.
Applications
- High-power industrial motor drives
- Uninterruptible power supply systems
- Industrial inverter circuits
Procurement Notes
Verify component authenticity through authorized Microchip Technology distributors or certified partners. Confirm that the specific part number matches the required Trench 7 specification and SP6C package variant. Ensure compliance with RoHS directives and check for any regional shipping restrictions prior to order placement.
Selection Notes
Select this module for applications requiring high current density and efficient thermal management within the 1200 V range. The dual common emitter configuration simplifies circuit design compared to half-bridge alternatives. Evaluate thermal resistance requirements against the 1.923 kW dissipation rating to ensure adequate heatsinking solutions are implemented.
Part Context
This component belongs to the Microchip Technology APTGX series, which focuses on high-performance IGBT modules. The series utilizes advanced Trench 7 silicon technology to optimize switching losses and conduction drops. It serves as a critical power switching element in modern energy conversion systems demanding reliability and efficiency.
Replacement Considerations
Direct substitutes include the APTGX600DU120T6G variants with different suffixes if pin compatibility is confirmed. Cross-reference electrical parameters such as VCEsat and current ratings when considering alternative packages like SP6 or D4 configurations from other manufacturers.
