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Product Detailed Parameters
- Description：PM-IGBT-TFS-SP1F
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 75A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：120 A
- Power - Max：340 W
- Current - Collector Cutoff (Max)：15 µA
- Input Capacitance (Cies) @ Vce：15100 pF @ 25 V
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Overview
The APTGX75A120T1G is a Microchip Technology IGBT power module featuring a half-bridge configuration with an integrated NTC thermistor. It utilizes silicon technology and supports screw mounting for chassis installation. The component operates with a maximum collector-emitter voltage of 1200 V and delivers a continuous collector current of 120 A at 25°C. Key electrical characteristics include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 150 nA, and a maximum power dissipation of 340 W.
Feature Summary
- Integrates an NTC thermistor for thermal monitoring
- Half-bridge topology for efficient power switching
- Designed for high-voltage industrial applications
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency inverters
Procurement Notes
Verify the specific suffix T1G against official datasheets to confirm package dimensions and pinout compatibility. Ensure the supplier provides valid traceability documentation. Confirm that the integrated NTC thermistor meets the thermal management requirements of the target application before finalizing procurement orders.
Selection Notes
Select this module when a half-bridge configuration with integrated thermal sensing is required. The 1200 V rating suits medium-voltage systems, while the 120 A current capacity supports moderate power loads. Verify that the 340 W power dissipation aligns with the available heatsinking infrastructure and ambient operating conditions.
Part Context
This component belongs to Microchip's PM-IGBT-TFS series, designed for robust power conversion. It represents a transition from discrete components to compact modules, offering improved reliability through optimized internal interconnections and standardized mounting interfaces for easier integration into existing power electronics designs.
Replacement Considerations
Direct substitutes within the same family include APTGX75A170T1G for higher voltage ratings. Cross-compatibility with other manufacturers requires careful verification of pinouts, thermal resistance values, and electrical characteristics to ensure safe operation.
