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The APTGX900U170D4G is a single IGBT power module manufactured by Microchip Technology, utilizing silicon technology and the D4 package. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 900 A at 25°C. The device has a collector-emitter saturation voltage of 1.7 V and a gate-emitter leakage current of 200 nA. Maximum power dissipation is 1.948 kW, with an operating temperature range from -40°C to +175°C. The maximum gate-emitter voltage is 20 V, and it employs screw mount installation.
Verify component authenticity through authorized Microchip Technology distributors or official channels. Confirm datasheet revisions and specific lot traceability requirements before procurement. Ensure compliance with RoHS directives and relevant environmental regulations applicable to your region. Validate that the D4 package dimensions match your thermal management and mechanical mounting specifications.
Select this module when high voltage blocking capability and substantial current handling are required in a compact form factor. Consider the 1.7 kV rating for medium-voltage AC/DC conversion stages. Evaluate thermal resistance characteristics against your heatsink capabilities to ensure operation within the 175°C limit. Compare saturation voltage and switching losses against alternative modules to optimize system efficiency.
This component belongs to the APTGX series of high-voltage IGBT modules from Microchip Technology. The series is engineered for demanding power electronics applications requiring reliable performance under high stress conditions. The D4 package provides a standardized footprint for integration into various industrial power converter topologies.
Consult official Microchip Technology documentation for verified cross-reference part numbers. Ensure any substitute maintains identical voltage, current, and thermal ratings. Verify pin compatibility and package dimensions to avoid mechanical redesign.