APTM100A13SG

$257.32

Description：MOSFET 2N-CH 1000V 65A SP6
Series：-

SKU:04984d71d3fd Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1000V 65A SP6
Series：-
Mfr：Microchip Technology
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1000V (1kV)
Current - Continuous Drain (Id) @ 25°C：65A
Rds On (Max) @ Id, Vgs：156mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id：5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：562nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：15200pF @ 25V
Power - Max：1250W
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SP6
Supplier Device Package：SP6
Grade：-
Qualification：-

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APTM100A13SG

Overview

The APTM100A13SG is a silicon N-channel power MOSFET module manufactured by Microchip Technology. It features a phase leg configuration with series and parallel diodes, housed in an SP6C package. The device supports a drain current of 65 amperes and withstands 1000 volts. Its typical on-resistance is 130 milliohms, with a maximum operating temperature of +150°C and power dissipation rated at 1.25 kW.

Feature Summary

Integrates a phase leg structure with complementary diode components for efficient switching applications.
Utilizes silicon metal-oxide semiconductor technology to deliver high voltage blocking capabilities.
Designed for chassis mounting within the SP6C package form factor.

Applications

Grid-tied renewable energy systems
Industrial motor drive inverters
High-power DC-AC conversion circuits

Procurement Notes

Verify the specific revision level and datasheet version prior to procurement, as manufacturing specifications may evolve. Confirm that the SP6C package dimensions align with the target thermal management infrastructure. Ensure that the 1000V rating meets the peak voltage requirements of the intended circuit topology to prevent breakdown during operation.

Selection Notes

Select this component when a combined switch and diode solution is required to minimize board space and parasitic inductance. The 130 milliohm resistance offers a balance between conduction losses and switching speed. Consider the 1.25 kW dissipation capability against the available heatsinking capacity to maintain junction temperatures within safe operational limits under continuous load conditions.

Part Context

This part belongs to the APTM series of power modules from Microchip Technology, which are engineered for robust performance in demanding power electronics environments. The series typically utilizes advanced silicon gate technology to ensure reliable switching characteristics. These modules are designed to replace discrete component arrangements, offering improved thermal coupling and reduced interconnection complexity in high-current applications.