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Product Detailed Parameters
- Description：MOSFET 4N-CH 1000V 11A SP1
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C：11A
- Rds On (Max) @ Id, Vgs：960mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：3876pF @ 25V
- Power - Max：208W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP1
- Supplier Device Package：SP1
- Grade：-
- Qualification：-
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Overview
The APTM100H80FT1G is a full-bridge MOSFET power module from Microsemi Corporation, featuring Power MOS 8™ Fast FREDFET technology. It provides a drain-source breakdown voltage of 1000V and a typical on-resistance of 800mΩ at 25°C. The device supports a continuous drain current of 11A at 25°C case temperature and handles a pulsed current of 68A. It includes an internal NTC thermistor for temperature monitoring and offers high isolation voltage of 2500V RMS between terminals and the case.
Feature Summary
- Power MOS 8™ Fast FREDFET technology with low RDSon and fast intrinsic reverse diode
- Internal NTC thermistor for precise temperature monitoring
- High level of integration with symmetrical design for very low stray inductance
- Isolated package allowing direct mounting to heatsink
Applications
- Welding converters
- Switched Mode Power Supplies
- Uninterruptible Power Supplies
- Motor control
Procurement Notes
Verify the specific ordering suffix FT1G against the manufacturer's latest documentation to confirm compliance with current environmental standards and pinout configurations. Ensure that thermal management solutions account for the junction-to-case thermal resistance and operating case temperature limits specified in the datasheet. Confirm availability status as product lifecycles may change without notice.
Selection Notes
Select this module for applications requiring high-frequency operation and robust performance under high voltage conditions. The integrated thermistor simplifies thermal protection circuitry design. Consider the 2500V RMS isolation rating when designing systems requiring galvanic isolation between power circuits and heatsinks. Evaluate the paralleling capability if higher phase leg current capabilities are required for the specific application load.
Part Context
This component belongs to the APTM series of full-bridge MOSFET power modules manufactured by Microsemi Corporation. It utilizes advanced Power MOS 8™ technology to achieve low switching losses and high efficiency. The SP1 package provides a compact form factor suitable for dense PCB layouts while maintaining high thermal performance through direct heatsink mounting.
Replacement Considerations
Consult official Microsemi substitution guides for verified equivalent parts. Cross-reference electrical parameters such as VDSS, RDSon, and package dimensions before implementation.
FAQ
What is the function of the internal thermistor?
The internal NTC thermistor allows for accurate monitoring of the module's junction temperature, facilitating thermal protection and management.
Can multiple legs be paralleled?
Yes, each leg can be easily paralleled to achieve a phase leg with twice the current capability.
What is the maximum isolation voltage?
The module provides an RMS isolation voltage of 2500V between any terminal and the case.
