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The APTM10DSKM19T3G is a dual N-channel silicon MOSFET module designed for dual buck chopper configurations. It features a drain-to-source voltage (VDSS) of 100V and a typical on-resistance (RDSon) of 19mΩ. The device supports a continuous current of 50A at a case temperature of 80°C, with a maximum power dissipation of 208W. Packaged in SP3 format, it operates within a junction temperature range of -40°C to 150°C.
Verify the specific package variant and manufacturer documentation when sourcing. Confirm that the SP3 package type matches the intended chassis mounting requirements. Ensure thermal management solutions align with the specified operating temperature ranges and power dissipation limits for reliable operation.
Select this component for applications requiring high-current dual-channel switching with low conduction losses. Consider the 100V rating and 50A current capacity against system demands. Evaluate the SP3 package compatibility with existing cooling infrastructure and chassis constraints before integration.
This part belongs to Microchip's discrete semiconductor portfolio, specifically within the power MOSFET category. It serves as a robust solution for medium-voltage power electronics, offering integrated dual-channel functionality to simplify circuit design compared to discrete single FET implementations.
Consult official Microchip documentation for verified substitute part numbers. Cross-reference VDSS, RDSon, and package dimensions to ensure functional equivalence without modifying the board layout.