APTM10DSKM19T3G

APTM10DSKM19T3G

$57.14
  • Description:MOSFET 2N-CH 100V 70A SP3
  • Series:-

SKU:e8c9d89d05ee Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 70A SP3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:70A
  • Rds On (Max) @ Id, Vgs:21mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:5100pF @ 25V
  • Power - Max:208W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Grade:-
  • Qualification:-

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APTM10DSKM19T3G

Overview

The APTM10DSKM19T3G is a dual N-channel silicon MOSFET module designed for dual buck chopper configurations. It features a drain-to-source voltage (VDSS) of 100V and a typical on-resistance (RDSon) of 19mΩ. The device supports a continuous current of 50A at a case temperature of 80°C, with a maximum power dissipation of 208W. Packaged in SP3 format, it operates within a junction temperature range of -40°C to 150°C.

Feature Summary

  • Dual N-channel configuration optimized for buck chopper applications
  • Low on-resistance for efficient power switching
  • High thermal tolerance suitable for chassis mounting

Applications

  • Power supply modules
  • Industrial motor drives
  • Chassis-mounted power conversion systems

Procurement Notes

Verify the specific package variant and manufacturer documentation when sourcing. Confirm that the SP3 package type matches the intended chassis mounting requirements. Ensure thermal management solutions align with the specified operating temperature ranges and power dissipation limits for reliable operation.

Selection Notes

Select this component for applications requiring high-current dual-channel switching with low conduction losses. Consider the 100V rating and 50A current capacity against system demands. Evaluate the SP3 package compatibility with existing cooling infrastructure and chassis constraints before integration.

Part Context

This part belongs to Microchip's discrete semiconductor portfolio, specifically within the power MOSFET category. It serves as a robust solution for medium-voltage power electronics, offering integrated dual-channel functionality to simplify circuit design compared to discrete single FET implementations.

Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Cross-reference VDSS, RDSon, and package dimensions to ensure functional equivalence without modifying the board layout.

APTM10DSKM19T3GAPTM10DSKM19T3G
$57.14
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