SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTM120H140FT1G is a full-bridge power module utilizing Silicon FREDFET technology. It features an 8A current rating and a VDSS of 1200V. The typical RDSon is 1400 mΩ. The device operates within a temperature range of -40°C to +150°C, with a Vgs of ±30V. It is housed in the SP1 package, supporting chassis or screw mounting. The module dissipates up to 208W.
Verify authenticity through authorized Microchip Technology distributors. Request official datasheets and test reports to confirm compliance with RoHS3 standards. Ensure packaging integrity matches the SP1 specification. Cross-reference part numbers to avoid counterfeit components. Validate technical parameters against the manufacturer's documentation before procurement.
Select this module for applications requiring high voltage isolation and full-bridge topology. Consider the 1200V rating and 8A current capacity for load requirements. Evaluate thermal management needs given the 208W dissipation and 150°C limit. Confirm compatibility with SP1 mounting styles. Review gate-source voltage limits for driver design.
This component belongs to Microchip Technology’s discrete and power MOSFET modules category. It utilizes Silicon Metal Oxide technology. The SP1 package supports press-in PCB or chassis mounting. It serves as a critical element in high-power electronic systems requiring reliable switching.
Consult official Microchip Technology substitution guides for verified alternatives. Do not assume cross-compatibility with other manufacturers' modules without rigorous validation. Verify pinout and electrical parameter alignment if considering substitutes.