APTM120H140FT1G

APTM120H140FT1G

$65.74
  • Description:MOSFET 4N-CH 1200V 8A SP1
  • Series:-

SKU:051fbcc201f9 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 1200V 8A SP1
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel (Full Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:8A
  • Rds On (Max) @ Id, Vgs:1.68Ohm @ 7A, 10V
  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:3812pF @ 25V
  • Power - Max:208W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP1
  • Supplier Device Package:SP1
  • Grade:-
  • Qualification:-

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APTM120H140FT1G

Overview

The APTM120H140FT1G is a full-bridge power module utilizing Silicon FREDFET technology. It features an 8A current rating and a VDSS of 1200V. The typical RDSon is 1400 mΩ. The device operates within a temperature range of -40°C to +150°C, with a Vgs of ±30V. It is housed in the SP1 package, supporting chassis or screw mounting. The module dissipates up to 208W.

Feature Summary

  • Full bridge configuration for efficient power conversion
  • High voltage capability with 1200V blocking
  • Robust thermal performance up to 150°C

Applications

  • Industrial motor drives
  • Power supply inverters
  • Uninterruptible power systems

Procurement Notes

Verify authenticity through authorized Microchip Technology distributors. Request official datasheets and test reports to confirm compliance with RoHS3 standards. Ensure packaging integrity matches the SP1 specification. Cross-reference part numbers to avoid counterfeit components. Validate technical parameters against the manufacturer's documentation before procurement.

Selection Notes

Select this module for applications requiring high voltage isolation and full-bridge topology. Consider the 1200V rating and 8A current capacity for load requirements. Evaluate thermal management needs given the 208W dissipation and 150°C limit. Confirm compatibility with SP1 mounting styles. Review gate-source voltage limits for driver design.

Part Context

This component belongs to Microchip Technology’s discrete and power MOSFET modules category. It utilizes Silicon Metal Oxide technology. The SP1 package supports press-in PCB or chassis mounting. It serves as a critical element in high-power electronic systems requiring reliable switching.

Replacement Considerations

Consult official Microchip Technology substitution guides for verified alternatives. Do not assume cross-compatibility with other manufacturers' modules without rigorous validation. Verify pinout and electrical parameter alignment if considering substitutes.

APTM120H140FT1GAPTM120H140FT1G
$65.74
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