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Product Detailed Parameters
- Description：MOSFET 6N-CH 1200V 17A SP6-P
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：6 N-Channel (3-Phase Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：17A
- Rds On (Max) @ Id, Vgs：684mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：187nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：5155pF @ 25V
- Power - Max：390W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP6
- Supplier Device Package：SP6-P
- Grade：-
- Qualification：-
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Overview
APTM120TDU57PG is a six-channel N-channel MOSFET array designed for baseplate mounting in the SP6-P package. It features a 1200V drain-source voltage rating and supports a continuous drain current of 17A at 25°C. The device delivers a maximum power dissipation of 390W with a typical on-resistance of 684 milliohms at 10V gate drive. Operating within a junction temperature range of -40°C to 150°C, it integrates three phases suitable for high-voltage power conversion applications.
Feature Summary
- Six-channel N-channel configuration arranged as a three-phase bridge
- High-voltage capability rated at 1200V for robust power switching
- Baseplate mounting design facilitates efficient thermal management
- Integrated structure reduces component count in power stages
Applications
- Three-phase motor drives
- Industrial power inverters
- High-voltage DC-AC conversion systems
Procurement Notes
Verify the exact suffix PG against official Microsemi documentation to confirm pinout and thermal interface specifications. Confirm end-of-life status and last-time-buy dates through authorized distributors. Ensure compatibility with existing cooling infrastructure due to the baseplate mounting requirement. Validate RoHS compliance records for regulatory adherence.
Selection Notes
Select this component when a compact six-channel solution is required for three-phase topologies. Compare on-resistance and gate charge parameters against alternative packages like SP1 or SP6 variants. Evaluate thermal resistance characteristics relative to the specific heatsink design. Consider the 1200V rating margin for system transient voltage spikes.
Part Context
The APTM120 series represents Microsemi's high-power discrete MOSFET offerings. This specific model utilizes the SP6-P package to accommodate multiple channels in a single footprint. It belongs to the broader portfolio of high-voltage silicon power devices intended for industrial and automotive applications requiring reliable switching performance.
Replacement Considerations
Consult official Microsemi substitution guides for verified equivalents. Check for updated package revisions or improved thermal performance variants within the APTM120 family. Verify pin-to-pin compatibility before integrating alternative part numbers.
