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Product Detailed Parameters
- Description：MOSFET 2N-CH 200V 333A SP4
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：200V
- Current - Continuous Drain (Id) @ 25°C：333A
- Rds On (Max) @ Id, Vgs：5mOhm @ 166.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs：1184nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：40800pF @ 25V
- Power - Max：1250W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP4
- Supplier Device Package：SP4
- Grade：-
- Qualification：-
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Overview
The APTM20DUM05TG is a dual common source MOSFET power module featuring two N-channel Power MOS V devices. It provides a drain-source breakdown voltage of 200V and a maximum continuous drain current of 333A at 25°C case temperature. The device exhibits a low on-resistance of 5mΩ and supports a pulsed drain current of 700A. With a maximum power dissipation of 1250W, it includes an internal thermistor for temperature monitoring and Kelvin connections for gate drive and drain voltage sensing.
Feature Summary
- Kelvin source and drain terminals enable easy drive and precise VDS monitoring
- Internal thermistor allows direct temperature monitoring
- Symmetrical design with M5 power connectors ensures very low stray inductance
- Isolated package permits direct mounting to heatsink
Applications
- AC Switches
- Switched Mode Power Supplies
- Uninterruptible Power Supplies
Procurement Notes
Verify the specific revision level against the manufacturer's datasheet before procurement. Confirm that the ordering suffix matches the required thermal and electrical specifications. Ensure handling procedures account for electrostatic discharge sensitivity as indicated in the documentation. Cross-reference the isolation voltage ratings with system requirements.
Selection Notes
Select this component for high-frequency applications requiring outstanding performance. The low junction-to-case thermal resistance facilitates efficient heat transfer. The isolated package design simplifies mounting directly to heatsinks. Consider the integrated thermistor for advanced thermal management strategies in demanding power conversion environments.
Part Context
This dual MOSFET module belongs to the APTM series designed for robust power switching. It utilizes Microsemi's Power MOS V technology to achieve low conduction losses. The integration of Kelvin connections reduces noise interference during high-speed switching operations. The rugged construction supports avalanche energy ratings for enhanced reliability in industrial power systems.
Replacement Considerations
Consult official substitution lists for compatible modules with matching voltage and current ratings. Verify pin compatibility and thermal characteristics when considering alternatives from other manufacturers.
FAQ
What is the function of the Kelvin source connection?
The Kelvin source connection provides a dedicated path for the gate drive return, minimizing noise interference and ensuring accurate switching control.
How does the internal thermistor assist in operation?
The internal thermistor allows for direct monitoring of the junction temperature, enabling proactive thermal management and protection against overheating.
What is the purpose of the Kelvin drain terminal?
The Kelvin drain terminal enables precise monitoring of the drain-source voltage (VDS) without the influence of stray inductance or package resistance.
