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Product Detailed Parameters
- Description：MOSFET 4N-CH 600V 20A SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：600V
- Current - Continuous Drain (Id) @ 25°C：20A
- Rds On (Max) @ Id, Vgs：276mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：5316pF @ 25V
- Power - Max：208W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP1
- Supplier Device Package：SP1
- Grade：-
- Qualification：-
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Overview
The APTM60H23FT1G is a full-bridge MOSFET power module from Microchip Technology, utilizing Power MOS 8 technology. It features a 600V drain-source breakdown voltage and a typical on-resistance of 230mΩ at 25°C. The continuous drain current is rated at 20A at 25°C case temperature, with a maximum power dissipation of 208W. The package includes an internal NTC thermistor for temperature monitoring.
Feature Summary
- Integrates four ultrafast FREDFETs in a single isolated full-bridge configuration
- Includes an internal NTC thermistor for direct temperature monitoring
- Features very low stray inductance through symmetrical design
- Supports easy PCB mounting with solderable terminals for both power and signal
Applications
- Welding converters
- Switched Mode Power Supplies
- Uninterruptible Power Supplies
- Motor control
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm exact electrical tolerances and thermal characteristics. Confirm RoHS compliance status and check for any recent Product Change Notifications (PCN) or errata related to the SP1 package before finalizing procurement specifications.
Selection Notes
Select this component for high-frequency applications requiring low input capacitance and gate charge. Ensure the thermal management system can handle the junction-to-case thermal resistance of 0.6°C/W. Verify that the drive circuitry supports the specified gate threshold voltage and leakage current limits for reliable switching performance.
Part Context
This device belongs to the Microchip Power MOS 8 family, designed for robust performance in power conversion circuits. It utilizes silicon technology within an isolated SP1 package, allowing direct mounting to heatsinks while maintaining electrical isolation between the terminals and the case.
Replacement Considerations
Consult official Microchip documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' modules without verifying pinout, thermal resistance, and electrical ratings.
