APTMC120TAM34CT3AG

Description：MOSFET 6N-CH 1200V 74A SP3
Series：-

SKU:e360998314f3 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET 6N-CH 1200V 74A SP3
Series：-
Mfr：Microchip Technology
Package：Bulk
Technology：Silicon Carbide (SiC)
Configuration：6 N-Channel (3-Phase Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：74A (Tc)
Rds On (Max) @ Id, Vgs：34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id：4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs：161nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：2788pF @ 1000V
Power - Max：375W
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP3
Grade：-
Qualification：-

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APTMC120TAM34CT3AG

Overview

The APTMC120TAM34CT3AG is a silicon carbide (SiC) discrete semiconductor module manufactured by Microchip Technology. It features a three-phase bridge configuration with six N-channel devices. The module utilizes the SP3F package and supports screw mount installation. Key electrical parameters include a drain-source voltage of 1.2 kV, a continuous drain current of 58 A, and a forward voltage of 1.5 V. Typical switching times are specified as 21 ns for turn-on delay and 50 ns for turn-off delay.

Feature Summary

Utilizes silicon carbide technology for enhanced thermal performance and lower switching losses compared to traditional silicon components.

Applications

Control and protection of SiC MOSFET-based power systems

Procurement Notes

Verify component status prior to integration. This specific part number is classified as obsolete or end-of-life. Confirm availability through authorized distributors or check for valid replacement alternatives from the manufacturer before finalizing design specifications.

Selection Notes

Select this module for applications requiring high-voltage three-phase rectification or inversion using wide-bandgap semiconductors. Ensure the system design accommodates the SP3F package dimensions and screw mounting requirements while verifying thermal management capabilities for the specified power dissipation levels.

Part Context

This component belongs to Microchip's portfolio of discrete semiconductor modules designed for power electronics. It represents the transition toward silicon carbide solutions in industrial power conversion, offering improved efficiency and compactness over legacy silicon-based three-phase bridge assemblies.