AR1FK-M3/I

AR1FK-M3/I

$0.07
  • Description:DIODE AVALANCHE 800V 1A DO219AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)

SKU:f1ae4ba8d90b Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE AVALANCHE 800V 1A DO219AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Technology:Avalanche
  • Voltage - DC Reverse (Vr) (Max):800 V
  • Current - Average Rectified (Io):1A
  • Voltage - Forward (Vf) (Max) @ If:1.6 V @ 1 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):120 ns
  • Current - Reverse Leakage @ Vr:1 µA @ 800 V
  • Capacitance @ Vr, F:9.3pF @ 4V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:DO-219AB
  • Supplier Device Package:DO-219AB (SMF)
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:Automotive
  • Qualification:AEC-Q101

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AR1FK-M3/I

Overview

The AR1FK-M3/I is a silicon avalanche rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum DC reverse voltage (Vr) of 800 V and an average rectified forward current (Io) of 1 A. The device utilizes the DO-219AB (SMF) surface-mount package. Key electrical characteristics include a maximum reverse leakage current of 1 µA at 800 V, a typical forward voltage of 1.6 V at 1 A, and a reverse recovery time (trr) of 120 ns. The junction capacitance is specified as 9.3 pF at 4 V and 1 MHz. The component operates within a junction temperature range of -55°C to 175°C.

Feature Summary

  • Engineered with avalanche technology for robust operation in high-voltage environments
  • Designed for surface-mount applications using the compact DO-219AB (SMF) package
  • Capable of handling fast switching speeds with a reverse recovery time of 120 ns
  • Rated for extended thermal performance with a maximum junction temperature of 175°C

Applications

  • High-voltage power supply circuits requiring avalanche-rated components
  • Automotive electronics systems compliant with AEC-Q101 standards
  • General-purpose rectification in industrial equipment operating up to 800 V
  • Fast-switching applications in consumer and commercial electronics

Procurement Notes

Verify the specific suffix 'I' against official Vishay documentation to confirm exact binning or testing criteria, as suffixes can denote specific manufacturing variations. Ensure the DO-219AB footprint matches your PCB design constraints. Cross-reference the datasheet revision date to ensure compliance with current technical specifications before finalizing procurement orders.

Selection Notes

Select this component when an 800 V reverse voltage rating and 1 A continuous current are required in a small surface-mount form factor. The avalanche capability makes it suitable for circuits subject to transient voltage spikes. Consider the 120 ns reverse recovery time for high-frequency applications. Verify that the 175°C junction temperature rating aligns with your system's thermal management strategy.

Part Context

The AR1FK-M3/I belongs to Vishay's family of avalanche rectifier diodes designed for high-reliability applications. These devices are characterized by their ability to withstand repetitive avalanche energy without degradation. The SMF package offers a compact solution for space-constrained designs while maintaining high voltage isolation. This series is widely used in automotive and industrial sectors where robustness under electrical stress is critical.

Replacement Considerations

Direct replacements must match the 800 V Vr, 1 A Io, and DO-219AB package. Check if alternative manufacturers offer equivalent avalanche-rated diodes with similar trr and thermal characteristics. Ensure any substitute maintains the same pinout and mechanical dimensions to fit existing footprints without redesign.

AR1FK-M3/IAR1FK-M3/I
$0.07
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