AR1L3N-AZ

AR1L3N-AZ

$0.35
  • Description:SMALL SIGNAL BIPOLAR TRANSISTOR
  • Series:-

SKU:8ff7bee94180 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:SMALL SIGNAL BIPOLAR TRANSISTOR
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:-
  • Power - Max:750 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92

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AR1L3N-AZ

Overview

The AR1L3N-AZ is a single pre-biased PNP bipolar junction transistor (BJT) manufactured by Renesas Electronics Corporation. Designed for through-hole mounting in the TO-92 package, this component integrates internal biasing resistors to simplify circuit design and reduce board space. It features a maximum collector current of 1 A, a collector-emitter voltage rating of 60 V, and a total power dissipation capability of 750 mW. The device serves as a small signal switching or amplification element within electronic systems requiring reliable PNP transistor functionality with built-in base drive configuration.

Feature Summary

  • Integrated pre-biasing network eliminates external resistor requirements
  • Single PNP transistor configuration for compact circuit implementation
  • Through-hole TO-92 package suitable for standard PCB assembly

Applications

  • General-purpose switching circuits
  • Amplifier stages in consumer electronics
  • Interface logic level translation

Procurement Notes

Verify the specific suffix designation against official Renesas documentation to confirm exact electrical characteristics and packaging specifications. Ensure that the procurement channel provides valid traceability and authenticity guarantees for semiconductor components. Cross-reference the part number with the latest datasheet revisions to confirm compliance with current manufacturing standards and environmental regulations applicable to the intended deployment region.

Selection Notes

Select this component when a pre-biased PNP transistor is required for applications needing simplified biasing networks. Consider the 60 V voltage rating and 1 A current limit to ensure operation within safe boundaries. Evaluate the thermal performance relative to the 750 mW power dissipation limit in the target enclosure environment before finalizing the design integration.

Part Context

This component belongs to Renesas' discrete semiconductor portfolio, specifically focusing on small signal bipolar transistors. These devices are engineered to provide reliable performance in general-purpose electronic applications. The pre-biased variant offers an integrated solution for designers seeking to minimize component count and simplify layout constraints in low-to-medium power circuit designs.

Replacement Considerations

Consult official cross-reference guides for electrically equivalent pre-biased PNP transistors from other manufacturers. Verify pinout compatibility and parameter alignment before substituting.

AR1L3N-AZAR1L3N-AZ
$0.35
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