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The ARF441 is an N-channel enhancement mode RF power MOSFET designed for narrow-band push-pull applications. It operates at a drain-source voltage of 50V and delivers 125W output power at 13.56MHz. The device features a typical gain of 21dB and efficiency of 63%. It utilizes a TO-247 package with a junction-to-case thermal resistance of 0.75°C/W. The transistor supports a continuous drain current of 11A and withstands a breakdown voltage up to 150V.
Verify that the specific order corresponds to the ARF441 variant rather than the ARF440, as they are mirror images. Confirm the package type matches the required TO-247 footprint. Ensure handling procedures account for electrostatic sensitivity during installation.
Select this component when designing balanced push-pull topologies requiring matched electrical characteristics between complementary devices. The mirrored pinout simplifies layout symmetry. Ensure the operating frequency aligns with the specified 13.56MHz performance data for optimal gain and efficiency metrics.
Manufactured by Microsemi Corporation (formerly Advanced Power Technology), this device belongs to the IV® MOS line of RF power transistors. It is engineered specifically for high-voltage operation in narrow-band applications where high efficiency and ruggedness are critical requirements.
The ARF440 serves as the direct functional counterpart within the same symmetric pair. Both devices share identical electrical specifications but feature inverted pinouts to facilitate push-pull mounting without crossing connections.
The ARF441 and ARF440 share identical electrical specifications but have mirror-image pinouts. This design allows them to be used together in push-pull configurations without requiring crossed wiring.
The absolute maximum Drain-Source Voltage (VDSS) is rated at 150 Volts.
No, the ARF441 is specifically designed for narrow-band applications, typically operating at frequencies such as 13.56MHz.