ARF441

ARF441

$23.36
  • Description:RF MOSFET 50V TO247AD
  • Series:-

SKU:1b53a1fe7bd5 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 50V TO247AD
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Frequency:13.56MHz
  • Gain:21dB
  • Voltage - Test:50 V
  • Current Rating (Amps):11A
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:125W
  • Voltage - Rated:150 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Configuration:N-Channel

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ARF441

Overview

The ARF441 is an N-channel enhancement mode RF power MOSFET designed for narrow-band push-pull applications. It operates at a drain-source voltage of 50V and delivers 125W output power at 13.56MHz. The device features a typical gain of 21dB and efficiency of 63%. It utilizes a TO-247 package with a junction-to-case thermal resistance of 0.75°C/W. The transistor supports a continuous drain current of 11A and withstands a breakdown voltage up to 150V.

Feature Summary

  • Designed as part of a symmetric pair with the ARF440, featuring mirror-image pinouts for simplified push-pull circuit integration.
  • Nitride passivated die construction provides improved reliability and ruggedness against electrostatic discharge.
  • Low thermal resistance facilitates efficient heat dissipation in high-power amplifier configurations.

Applications

  • Narrow-band commercial RF power amplifiers
  • Medical RF power amplifier systems
  • Industrial ISM band RF power generation

Procurement Notes

Verify that the specific order corresponds to the ARF441 variant rather than the ARF440, as they are mirror images. Confirm the package type matches the required TO-247 footprint. Ensure handling procedures account for electrostatic sensitivity during installation.

Selection Notes

Select this component when designing balanced push-pull topologies requiring matched electrical characteristics between complementary devices. The mirrored pinout simplifies layout symmetry. Ensure the operating frequency aligns with the specified 13.56MHz performance data for optimal gain and efficiency metrics.

Part Context

Manufactured by Microsemi Corporation (formerly Advanced Power Technology), this device belongs to the IV® MOS line of RF power transistors. It is engineered specifically for high-voltage operation in narrow-band applications where high efficiency and ruggedness are critical requirements.

Replacement Considerations

The ARF440 serves as the direct functional counterpart within the same symmetric pair. Both devices share identical electrical specifications but feature inverted pinouts to facilitate push-pull mounting without crossing connections.

FAQ

How does the ARF441 differ from the ARF440?

The ARF441 and ARF440 share identical electrical specifications but have mirror-image pinouts. This design allows them to be used together in push-pull configurations without requiring crossed wiring.

What is the maximum drain-source voltage rating?

The absolute maximum Drain-Source Voltage (VDSS) is rated at 150 Volts.

Is the device suitable for broadband applications?

No, the ARF441 is specifically designed for narrow-band applications, typically operating at frequencies such as 13.56MHz.

ARF441ARF441
$23.36
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