ART2K0TFESJ

ART2K0TFESJ

$185.45
  • Description:RF MOSFET 1230/TRAY
  • Series:-

SKU:74f4629b9ac4 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET 1230/TRAY
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS (Dual)
  • Frequency:1MHz ~ 400MHz
  • Gain:29dB
  • Voltage - Test:65 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:2000W
  • Voltage - Rated:200 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:ACC-1230-6F-2
  • Supplier Device Package:ACC-1230-6F-2
  • Configuration:2 N-Channel

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ART2K0TFESJ

Overview

The ART2K0TFESJ is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. It utilizes Advanced Rugged Technology (ART) to deliver high performance in the 1 MHz to 400 MHz frequency range. The device features a drain-source breakdown voltage of 65 V and an on-resistance of 100 mOhms. Designed for broadband applications, it supports Class E operation up to 53 V and is characterized from 30 V to 65 V. Key electrical parameters include a gain of 28.4 dB and a maximum output power of 2 kW. The component operates within a temperature range up to +225°C and is housed in an SOT539BN-5 surface-mount package.

Feature Summary

  • Advanced Rugged Technology ensures excellent ruggedness with no device degradation under stress conditions.
  • Integrated dual-sided ESD protection enables Class C operation and complete switch-off capability.
  • High breakdown voltage allows for Class E operation up to 53 V drain-source voltage.
  • Designed for broadband operation with excellent thermal stability and high efficiency.

Applications

  • Industrial, Scientific, and Medical (ISM) equipment such as plasma generators and CO2 lasers.
  • Broadcast systems including FM radio transmitters.
  • Communications infrastructure like particle accelerators and MRI systems.

Procurement Notes

Verify the specific suffix 'J' against official Ampleon documentation to confirm packaging details, as suffixes often denote tray quantities or tape-and-reel configurations. Ensure compatibility with SOT539BN-5 footprints during procurement planning. Cross-reference datasheet revision dates to guarantee parameter accuracy for production integration.

Selection Notes

Select this component for applications requiring robust LDMOS performance across HF to VHF bands. The dual-channel configuration supports push-pull topologies. Verify that the 65 V rating aligns with the system's supply voltage requirements. Consider the thermal management needs associated with 2 kW output power in the specified frequency range.

Part Context

This part belongs to Ampleon’s ART series of LDMOS transistors, designed for high-efficiency broadband applications. The ART technology focuses on ruggedness and reliability, making these devices suitable for demanding industrial and broadcast environments where device longevity and consistent performance are critical.

Replacement Considerations

Check for direct substitutes within the ART family, such as the ART2K0FESJ, ensuring pinout and electrical specifications match. Verify that any replacement maintains the same SOT539BN-5 package dimensions and thermal characteristics to avoid redesigning the PCB layout.

ART2K0TFESJART2K0TFESJ
$185.45
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