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The ART2K0TFESJ is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. It utilizes Advanced Rugged Technology (ART) to deliver high performance in the 1 MHz to 400 MHz frequency range. The device features a drain-source breakdown voltage of 65 V and an on-resistance of 100 mOhms. Designed for broadband applications, it supports Class E operation up to 53 V and is characterized from 30 V to 65 V. Key electrical parameters include a gain of 28.4 dB and a maximum output power of 2 kW. The component operates within a temperature range up to +225°C and is housed in an SOT539BN-5 surface-mount package.
Verify the specific suffix 'J' against official Ampleon documentation to confirm packaging details, as suffixes often denote tray quantities or tape-and-reel configurations. Ensure compatibility with SOT539BN-5 footprints during procurement planning. Cross-reference datasheet revision dates to guarantee parameter accuracy for production integration.
Select this component for applications requiring robust LDMOS performance across HF to VHF bands. The dual-channel configuration supports push-pull topologies. Verify that the 65 V rating aligns with the system's supply voltage requirements. Consider the thermal management needs associated with 2 kW output power in the specified frequency range.
This part belongs to Ampleon’s ART series of LDMOS transistors, designed for high-efficiency broadband applications. The ART technology focuses on ruggedness and reliability, making these devices suitable for demanding industrial and broadcast environments where device longevity and consistent performance are critical.
Check for direct substitutes within the ART family, such as the ART2K0FESJ, ensuring pinout and electrical specifications match. Verify that any replacement maintains the same SOT539BN-5 package dimensions and thermal characteristics to avoid redesigning the PCB layout.