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The Ampleon ART2K0FEGJ is a 2000 W LDMOS RF power transistor based on Advanced Rugged Technology (ART). It operates in the 1 MHz to 400 MHz frequency range and is housed in an SOT1248C package. The device supports drain-source voltages up to 65 V, with high breakdown voltage enabling Class E operation up to 53 V. Key electrical parameters include a drain-source breakdown voltage of 203 V minimum, gate-source threshold voltage of 2.1 V typical, and input capacitance of 610 pF at 1 MHz. At 108 MHz pulsed operation, it delivers 2000 W output power with 72.1% drain efficiency and 28.4 dB gain.
Verify the specific ordering suffix J against official documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status via the manufacturer's product details page. Ensure handling precautions for electrostatic sensitive devices are followed during storage and assembly.
Select this component for high-power broadband applications requiring robust performance in ISM, broadcast, and communication sectors. Consider the SOT1248C package for surface-mount integration. Evaluate thermal management requirements based on the junction-to-case thermal resistance characteristics provided in the datasheet.
The ART2K0FEGJ belongs to the ART2K0FE family of power LDMOS transistors manufactured by Ampleon. This series utilizes Advanced Rugged Technology to deliver high reliability and power density. The GJ suffix specifically denotes the SOT1248C package variant supplied in tape-and-reel format, distinguishing it from tray-packaged counterparts like the FE or FES models.
Direct replacements within the same family include ART2K0FEU and ART2K0FESU, though these utilize different packages (SOT539AN and SOT539BN respectively). Verify pinout compatibility and mechanical dimensions before substitution.