ART1K6FHSU

Overview

The ART1K6FHSU is a dual N-channel LDMOS RF power transistor based on Advanced Rugged Technology (ART). It operates within a frequency range of 1 MHz to 425 MHz and delivers up to 1600 W output power. The device features a drain-source breakdown voltage of 177 V, a gate-source voltage range of -9 V to +13 V, and a threshold voltage of 2.5 V. It utilizes the SOT539BN package with an on-state resistance of 84 mΩ. Designed for high efficiency and thermal stability, it supports Class E operation at 48 V and is qualified for supply voltages up to 55 V.

Feature Summary

• High breakdown voltage enabling Class E operation at 48 V
• Integrated dual-sided ESD protection supporting Class C operation
• Excellent ruggedness with no device degradation under mismatch conditions
• High efficiency and excellent thermal stability

Applications

• Industrial, scientific and medical applications including plasma generators, MRI systems, CO2 lasers, and particle accelerators
• Broadcast applications such as FM radio and VHF TV
• Communications systems including non-cellular communications and UHF radar

Procurement Notes

Verify the specific ordering suffix 'S' corresponds to the SOT539BN earless flanged balanced ceramic package configuration. Confirm that the component meets RoHS compliance requirements by checking the product details on the manufacturer's website. Ensure handling procedures adhere to ESD sensitivity standards, specifically CDM classification C2A and HBM classification 2, during storage and assembly.

Selection Notes

Select this component for broadband applications requiring high power density between 1 MHz and 425 MHz. It is suitable for designs operating at VDS levels of 50 V or 55 V. Verify that the application circuit can accommodate the required gate-source voltage limits and junction temperature ratings up to 225 °C. Consider the thermal resistance characteristics when designing the heat dissipation system for continuous or pulsed operation.

Part Context

This part belongs to the ART series of power LDMOS transistors manufactured by Ampleon USA Inc. It shares core electrical specifications with the ART1K6FH and ART1K6FHG models but differs in physical packaging. The ART1K6FHSU specifically utilizes the SOT539BN outline, distinguishing it from the flanged SOT539AN and the SOT1248C variants within the same performance family.

Replacement Considerations

The ART1K6FHU and ART1K6FHGJ are functionally equivalent alternatives within the same datasheet. Substitution requires verifying compatibility with the specific PCB footprint, as the ART1K6FHU uses the SOT539AN package and the ART1K6FHGJ uses the SOT1248C package.