ART2K0FESJ

Overview

The ART2K0FESJ is a 2000 W LDMOS RF power transistor based on Advanced Rugged Technology (ART). It operates across a frequency range of 1 MHz to 400 MHz. The device supports a maximum drain-source voltage (VDS) of 65 V and enables Class E operation up to 53 V. It features integrated dual-sided ESD protection for Class C operation. Performance data includes 1600 W output at 41 MHz with 79% efficiency, 1750 W at 60 MHz with 80% efficiency, and 2180 W pulsed output at 64 MHz with 78% efficiency.

Feature Summary

• High breakdown voltage capability supporting Class E operation up to 53 V
• Integrated dual-sided ESD protection enabling Class C operation
• Excellent ruggedness with no device degradation under stress
• Broadband design optimized for industrial, scientific, and broadcast applications

Applications

• Industrial, Scientific, and Medical (ISM) equipment including plasma generators, MRI systems, CO2 lasers, and particle accelerators
• Broadcast applications such as FM radio transmitters
• DVB-T transmission systems utilizing symmetric ultra-wideband Doherty configurations

Procurement Notes

Verify the specific suffix 'J' against official Ampleon documentation to confirm packaging or tape-and-reel specifications. Confirm RoHS compliance status directly via manufacturer resources. Ensure compatibility with existing thermal management solutions given the high power density. Validate that the 65 V rating aligns with the target circuit bias requirements.

Selection Notes

Select this component for broadband designs requiring high power output between 1 MHz and 400 MHz. Consider the 65 V maximum rating when designing bias networks. The integrated ESD protection simplifies drive interface requirements for Class C modes. Evaluate thermal resistance parameters from the datasheet to ensure adequate heat sinking for continuous wave operations.

Part Context

This part belongs to the ART2K0FE series of LDMOS power transistors manufactured by Ampleon. The series utilizes Advanced Rugged Technology to deliver high reliability in demanding RF environments. The ART2K0FESJ variant specifically denotes the packaged form factor intended for surface-mount integration in high-power amplifier modules.

Replacement Considerations

Direct replacements within the same family include the ART2K0FE and ART2K0FEG variants. Verify if package differences impact board layout. Cross-reference electrical characteristics with other 2000 W LDMOS devices from alternative manufacturers only if pinouts and thermal footprints are identical.