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The ART1K6PHGZ is an RF LDMOS power transistor manufactured by Ampleon USA Inc. It operates within a frequency range of 1 MHz to 450 MHz and delivers a rated output power of 1.6 kW. The device features a drain-source breakdown voltage (Vds) of 177 V and provides a gain of 27.3 dB. Designed for surface mount applications, it supports a maximum operating temperature of +225°C.
Verify the specific suffix 'GZ' against official Ampleon documentation to confirm exact packaging and tape-and-reel specifications. Confirm regional availability as distribution channels may vary. Ensure compatibility with existing SMD/SMT assembly processes before procurement.
Select this component for broadband applications requiring high efficiency and significant power density in the HF to VHF spectrum. Verify that the system design accommodates the 177 V breakdown rating and the required thermal management for +225°C operation limits.
This part belongs to the ART series of LDMOS RF power transistors from Ampleon. The series is engineered for high-efficiency broadband applications across a wide frequency range. These devices are commonly utilized in industrial RF generators where stable power delivery is critical.
Consult official Ampleon substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully when considering alternative LDMOS devices from other manufacturers.