ART2K0TFEJ

Overview

The ART2K0TFEJ is an LDMOS RF power transistor manufactured by Ampleon. It features a dual N-channel configuration with a drain-source breakdown voltage of 65 V and a typical on-resistance of 107 mOhms. The device operates within a frequency range of 1 MHz to 400 MHz, delivering 2 kW of output power with a gain of 29 dB. It utilizes the ACC-1230 package style and supports a maximum operating temperature of +225°C.

Feature Summary

• Dual N-channel LDMOS technology for high-power RF applications
• High thermal stability supporting operation up to +225°C
• Optimized for broadband performance across 1 MHz to 400 MHz

Applications

• Broadband RF amplification
• Industrial heating systems
• Plasma generation equipment

Procurement Notes

Verify component authenticity through authorized Ampleon distributors or certified partners. Confirm package integrity and pin alignment against official mechanical drawings. Ensure storage conditions comply with moisture sensitivity levels prior to soldering. Validate electrical parameters using manufacturer test data sheets to guarantee performance specifications are met.

Selection Notes

Select this component for applications requiring robust 2 kW output in the HF/VHF bands. The 65 V rating suits standard industrial power supplies. Consider the specific ACC-1230 mounting requirements during PCB design. Evaluate thermal management solutions to maintain junction temperatures within safe limits under continuous load conditions.

Part Context

This part belongs to the Ampleon ART series of LDMOS transistors designed for high-efficiency RF power conversion. It represents a specialized solution for broadband amplification where size and thermal performance are critical constraints compared to older silicon technologies.

Replacement Considerations

Direct substitutes include the ART2K0TFESJ, which shares identical electrical characteristics but differs in packaging style from screw mount to surface mount variants.