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The ART1K6FHU is a dual N-channel LDMOS RF power transistor based on Advanced Rugged Technology (ART). It delivers 1600 W output power at 55 V and 1400 W at 50 V within the 1 MHz to 425 MHz frequency range. The device features a drain-source breakdown voltage of 177 V, a gate-source threshold voltage of 2.1 V typical, and an on-state resistance of 84 mΩ. Packaged in SOT539AN with flange mounting, it supports Class E operation up to 48 V and includes integrated dual-sided ESD protection.
Verify the specific ordering suffix against the manufacturer's current data sheet to confirm package type and packing quantity. Confirm RoHS compliance status directly with the supplier or official documentation before finalizing procurement orders.
Select this component for high-power broadband applications requiring robust performance. Ensure the design accommodates the 55 V maximum drain-source voltage and utilizes appropriate thermal management for the SOT539AN ceramic package.
This part belongs to the ART series of LDMOS power transistors manufactured by Ampleon. The series is engineered for high efficiency and reliability in demanding RF environments, supporting various packaging options like SOT539AN for different mounting requirements.
Consult the official datasheet for compatible alternatives such as ART1K6FHS or ART1K6FHG. Verify pinout compatibility and thermal characteristics before substituting.