ART1K6FHU

ART1K6FHU

$159.42
  • Description:RF MOSFET LDMOS 55V SOT539AN
  • Series:ART

SKU:81f946b346d2 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 55V SOT539AN
  • Series:ART
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1MHz ~ 425MHz
  • Gain:28dB
  • Voltage - Test:55 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:50 mA
  • Power - Output:1600W
  • Voltage - Rated:177 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-539AN
  • Supplier Device Package:SOT539AN
  • Configuration:Dual, Common Source

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ART1K6FHU

Overview

The ART1K6FHU is a dual N-channel LDMOS RF power transistor based on Advanced Rugged Technology (ART). It delivers 1600 W output power at 55 V and 1400 W at 50 V within the 1 MHz to 425 MHz frequency range. The device features a drain-source breakdown voltage of 177 V, a gate-source threshold voltage of 2.1 V typical, and an on-state resistance of 84 mΩ. Packaged in SOT539AN with flange mounting, it supports Class E operation up to 48 V and includes integrated dual-sided ESD protection.

Feature Summary

  • High breakdown voltage enables Class E operation at VDS = 48 V
  • Integrated dual-sided ESD protection facilitates Class C operation and complete switch-off
  • Excellent ruggedness ensures no device degradation under load mismatch conditions
  • Designed for broadband operation across ISM, broadcast, and communications bands

Applications

  • Industrial, scientific and medical applications including plasma generators and MRI systems
  • Broadcast transmitters for FM radio and VHF TV
  • Non-cellular communications and UHF radar systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current data sheet to confirm package type and packing quantity. Confirm RoHS compliance status directly with the supplier or official documentation before finalizing procurement orders.

Selection Notes

Select this component for high-power broadband applications requiring robust performance. Ensure the design accommodates the 55 V maximum drain-source voltage and utilizes appropriate thermal management for the SOT539AN ceramic package.

Part Context

This part belongs to the ART series of LDMOS power transistors manufactured by Ampleon. The series is engineered for high efficiency and reliability in demanding RF environments, supporting various packaging options like SOT539AN for different mounting requirements.

Replacement Considerations

Consult the official datasheet for compatible alternatives such as ART1K6FHS or ART1K6FHG. Verify pinout compatibility and thermal characteristics before substituting.

ART1K6FHUART1K6FHU
$159.42
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