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The ART2K5TPUY is a 2500 W LDMOS RF power transistor based on Advanced Rugged Technology, designed for ISM, broadcast, and communications applications across 1 MHz to 400 MHz. It operates with a drain-source voltage of 75 V and delivers 2500 W output power at 108 MHz with 28.5 dB gain and 76% efficiency. The device features dual-gate architecture, integrated thermal sensing FETs, and robust ESD protection. Packaged in the OMP-1230-6F-2 surface-mount format, it supports Class C operation and exhibits excellent ruggedness against load mismatches up to 65:1 VSWR.
Verify the specific ordering suffix 'Y' corresponds to the TR13 dry pack configuration with a minimum orderable quantity of 100 pieces. Confirm RoHS compliance status via official Ampleon channels. Ensure handling procedures meet CDM Class C2A and HBM Class 2 ESD sensitivity requirements during assembly and testing.
Select this component for high-power broadband applications requiring 2500 W output within the 1–400 MHz range. Evaluate thermal resistance characteristics and impedance matching networks for the OMP-1230-6F-2 package. Consider the integrated thermal sensor for precise junction temperature management in continuous or pulsed duty cycles.
This part belongs to Ampleon's ART series of LDMOS transistors, engineered for high reliability and ruggedness. The ART2K5TPU variant specifically targets high-power industrial and broadcast sectors. The 'Y' suffix denotes the specific tape-and-reel packaging variant suitable for automated surface-mount production lines.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Ampleon directly for qualified alternatives or cross-reference options that match the 2500 W power class and OMP-1230-6F-2 footprint.
The device includes two temperature sense FETs electrically isolated from the RF power sections but sharing a common ground. They operate by applying a fixed voltage to the input pin and monitoring the temperature-dependent current.
In Class-AB operation, the transistor withstands a load mismatch corresponding to a VSWR of 65:1 through all phases at 75 V drain-source voltage and 2500 W pulsed output power.
The device is classified as CDM Class C2A (500 V pulse) and HBM Class 2 (2000 V pulse), requiring strict adherence to electrostatic discharge handling precautions.