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The ART1K6PHGY is a 1600 W LDMOS RF power transistor based on Advanced Rugged Technology, designed for ISM, broadcast, and communications applications. It operates from 1 MHz to 450 MHz with a drain-source breakdown voltage of 177 V. At 108 MHz and VDS = 55 V, it delivers 1600 W output power with 28.1 dB gain and 76.4% drain efficiency in pulsed mode. The device supports Class E operation at VDS = 48 V and is characterized from 30 V to 55 V. It features integrated dual-sided ESD protection and excellent ruggedness against load mismatches up to 65:1 VSWR.
Verify the specific ordering suffix 'Y' corresponds to the TR13 reel packing format as documented in the official Ampleon ordering table. Confirm that the component status remains 'Product data sheet' (Production) by checking the latest datasheet revision history. Ensure compliance with RoHS requirements as stated in the product details section before finalizing procurement specifications.
Select this component for designs requiring high power density in the 1–450 MHz range. Verify thermal management capabilities given the junction-to-case thermal resistance of 0.064 K/W. Ensure the bias circuit supports the specified quiescent current ranges for desired efficiency levels. Confirm input and output impedance matching networks align with the typical push-pull impedance values provided in the datasheet for the target operating frequency.
This part belongs to the ART1K6PH family of power LDMOS transistors manufactured by Ampleon. The 'G' suffix indicates the OMP-1230-4G-1 package variant, while 'Y' denotes the specific reel packaging configuration. It shares core electrical characteristics with the ART1K6PHZ and ART1K6PHY variants, differing primarily in physical packaging and handling logistics rather than semiconductor performance parameters.
ART1K6PHG serves as the base model for this component. ART1K6PH and ART1K6PHZ are alternative package variants within the same family.