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The ART150PEGXY is a 150 W LDMOS RF transistor based on Advanced Rugged Technology (ART), designed for ISM, broadcast, and communications applications across 1 MHz to 650 MHz. It features an N-Channel configuration with a drain-source breakdown voltage of 200 V and a maximum operating junction temperature of +225 °C. The device operates in TO-270-2G-1-3 packages with integrated dual-sided ESD protection. Key electrical parameters include a typical power gain of 31.2 dB at 150 W output, a drain-source on-state resistance of 497 mOhms, and a gate-source threshold voltage of 2.5 V.
Verify the specific ordering suffix against official Ampleon documentation to confirm package type and packing details. Confirm RoHS compliance status through manufacturer resources before procurement. Ensure handling procedures meet ESD sensitivity requirements specified in the datasheet.
Select this component for designs requiring high ruggedness and broadband performance between 1 MHz and 650 MHz. Verify that the application circuit supports the required drain-source voltage range of 30 V to 65 V. Ensure thermal management solutions accommodate the junction-to-case thermal resistance characteristics.
This part belongs to the ART150PE family from Ampleon, utilizing Advanced Rugged Technology. It shares core specifications with the ART150PE variant but differs in packaging and handling configurations. The product line targets robust RF power amplification in industrial and broadcast sectors.
Consult official Ampleon documentation for verified substitute part numbers. Cross-referencing requires matching key electrical parameters and physical package dimensions to ensure compatibility.