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The ART1K6FHGJ is a dual N-channel LDMOS RF power transistor based on Advanced Rugged Technology (ART). It operates within a frequency range of 1 MHz to 425 MHz and delivers up to 1600 W output power. The device features a drain-source breakdown voltage of 177 V, a gate-source threshold voltage of 2.5 V maximum, and an on-state resistance of 84 mOhms. It supports Class E operation at 48 V and is characterized from 30 V to 55 V. Packaged in SOT1248C-5, it includes integrated dual-sided ESD protection and is designed for broadband applications with high efficiency and thermal stability.
Verify the specific ordering suffix GJ corresponds to the SOT1248C package and TR13 reel packing configuration. Confirm RoHS compliance status via official Ampleon product details before procurement. Ensure handling procedures adhere to ESD sensitivity classifications C2A and HBM Class 2 to prevent device damage during assembly and testing.
Select this component for designs requiring high power density and ruggedness in ISM, broadcast, or communication bands. Verify that the application circuit supports the required pulsed conditions (tp = 100 µs; δ = 10%) for optimal performance. Ensure the design accommodates the specified thermal resistance and junction temperature limits for reliable long-term operation.
The ART1K6FHGJ belongs to the ART series of LDMOS transistors manufactured by Ampleon. This series utilizes Advanced Rugged Technology to provide high reliability and consistent performance. The GJ suffix specifically denotes the SOT1248C ceramic package variant, distinguishing it from other package options like SOT539AN or SOT539BN within the same electrical family.
Direct replacements include ART1K6FHU and ART1K6FHSU, which share identical electrical specifications but utilize different packages (SOT539AN and SOT539BN respectively). Substitution requires careful evaluation of mechanical footprint and thermal interface compatibility.