ART1K6PHZ

ART1K6PHZ

$106.51
  • Description:RF MOSFET LDMOS 55V OMP1230
  • Series:ART

SKU:8d1584c19a13 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 55V OMP1230
  • Series:ART
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1MHz ~ 450MHz
  • Gain:27.4dB
  • Voltage - Test:55 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:50 mA
  • Power - Output:1600W
  • Voltage - Rated:177 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:OMP-1230-4G-1
  • Supplier Device Package:OMP-1230-4G-1
  • Configuration:Dual, Common Source

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ART1K6PHZ

Overview

The ART1K6PHZ is an RF power LDMOS transistor manufactured by Ampleon. It operates within a frequency range of 1 MHz to 450 MHz and delivers an output power of 1.6 kW. The device features a drain-source breakdown voltage (Vds) of 177 V and a gain of 27.3 dB. Gate-source voltage limits are specified at -9 V and +13 V, with a threshold voltage of 2.5 V. Designed for surface mount installation, it supports a maximum operating temperature of +225 C. The component is supplied in a reel package format.

Feature Summary

  • High-power RF performance capability delivering 1.6 kW output
  • LDMOS technology optimized for frequencies up to 450 MHz
  • Robust thermal handling supporting operation up to +225 C

Applications

  • RF power amplifier stages
  • Broadcast transmission systems
  • Industrial heating and plasma generation

Procurement Notes

Verify the specific suffix Z against official Ampleon documentation to confirm packaging and tape-and-reel specifications. Confirm availability status as distribution channels may indicate regional sales restrictions. Ensure compatibility with SMD/SMT assembly processes given the reel packaging format.

Selection Notes

Select this component when high output power near 1.6 kW is required within the 1-450 MHz band. Evaluate the 177 V breakdown voltage against circuit supply requirements. Consider the +225 C maximum junction temperature for thermal management design in high-density RF modules.

Part Context

This part belongs to the ART series of LDMOS transistors from Ampleon. The series focuses on high-efficiency RF power amplification using silicon LDMOS technology. These devices are engineered for robustness in demanding radio frequency environments.

Replacement Considerations

Consult official substitution guides for equivalent power levels and frequency ranges. Verify pinout compatibility and thermal resistance characteristics before replacing existing designs.

ART1K6PHZART1K6PHZ
$106.51
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