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The ART1K6PHZ is an RF power LDMOS transistor manufactured by Ampleon. It operates within a frequency range of 1 MHz to 450 MHz and delivers an output power of 1.6 kW. The device features a drain-source breakdown voltage (Vds) of 177 V and a gain of 27.3 dB. Gate-source voltage limits are specified at -9 V and +13 V, with a threshold voltage of 2.5 V. Designed for surface mount installation, it supports a maximum operating temperature of +225 C. The component is supplied in a reel package format.
Verify the specific suffix Z against official Ampleon documentation to confirm packaging and tape-and-reel specifications. Confirm availability status as distribution channels may indicate regional sales restrictions. Ensure compatibility with SMD/SMT assembly processes given the reel packaging format.
Select this component when high output power near 1.6 kW is required within the 1-450 MHz band. Evaluate the 177 V breakdown voltage against circuit supply requirements. Consider the +225 C maximum junction temperature for thermal management design in high-density RF modules.
This part belongs to the ART series of LDMOS transistors from Ampleon. The series focuses on high-efficiency RF power amplification using silicon LDMOS technology. These devices are engineered for robustness in demanding radio frequency environments.
Consult official substitution guides for equivalent power levels and frequency ranges. Verify pinout compatibility and thermal resistance characteristics before replacing existing designs.