ART2K0PEGZ

Overview

The ART2K0PEGZ is a dual N-channel LDMOS RF power transistor based on Advanced Rugged Technology (ART). It operates from 1 MHz to 450 MHz with a drain-source breakdown voltage of 200 V and qualified operation up to 65 V. The device delivers 2000 W output power at 3 dB gain compression, achieving typical drain efficiency of 71.7% and power gain of 27.7 dB at 108 MHz. Key DC characteristics include a threshold voltage of 2.6 V maximum and an on-state resistance of 0.106 Ω. It features integrated dual-sided ESD protection and excellent thermal stability.

Feature Summary

• Advanced Rugged Technology ensures no device degradation under load mismatch conditions corresponding to VSWR ≥ 65:1 through all phases.
• Integrated dual-sided ESD protection enables Class C operation and complete switch-off capability.
• High breakdown voltage supports Class E operation up to 53 V and full characterization across 30 V to 65 V ranges.
• Designed for broadband operation with excellent thermal stability and high efficiency.

Applications

• Industrial, scientific and medical applications including plasma generators, MRI systems, CO2 lasers, and particle accelerators.
• Broadcast applications such as FM radio and VHF TV transmission.
• Communications systems including non-cellular communications and UHF radar.

Procurement Notes

Verify the ordering suffix Z against the manufacturer's current product data sheet to confirm RoHS compliance status. Confirm the package type OMP-1230-4G-1 matches the required PCB footprint. Ensure handling procedures adhere to ESD sensitivity standards, specifically the Charged Device Model Class C2A rating defined in the datasheet.

Selection Notes

Select this component for high-power broadband applications requiring ruggedness against severe load mismatches. Verify that the operating frequency falls within the 1 MHz to 450 MHz range. Ensure the design accommodates the dual N-channel configuration and the specific impedance values provided for push-pull operation at the target frequency.

Part Context

The ART2K0PEGZ belongs to the ART series of LDMOS transistors manufactured by Ampleon. It shares the same core technology and performance profile as the ART2K0PE, differing primarily in packaging and compliance specifications. This family is designed for ISM, broadcast, and communications markets.

Replacement Considerations

The ART2K0PE is the primary variant within the same technical specification family. Verify if the specific packaging or RoHS requirements necessitate the G suffix over the F suffix. No other direct cross-model substitutes are documented in the official data sheet.

FAQ

What is the maximum VSWR the device can withstand?

The ART2K0PEGZ can withstand a load mismatch corresponding to VSWR ≥ 65:1 through all phases under specified pulsed operating conditions.

Does the device include ESD protection?

Yes, it features integrated dual-sided ESD protection which enables Class C operation and allows for complete switch-off of the transistor.

What is the junction temperature limit?

The maximum junction temperature (Tj) is limited to 225 °C according to the absolute maximum ratings.