ART2K0FEU

Overview

The ART2K0FEU is a 2000 W LDMOS RF power transistor based on Advanced Rugged Technology (ART). It operates from 1 MHz to 400 MHz with a drain-source voltage rating of 200 V and qualified operation up to 65 V. Key electrical parameters include a breakdown voltage of 203 V, input capacitance of 610 pF, and feedback capacitance of 1.73 pF at 1 MHz. At 108 MHz under pulsed conditions (tp=100 µs, δ=5%), it delivers 2000 W output power with typical gain of 28.4 dB and drain efficiency of 72.1%. The device features dual-sided ESD protection and is housed in an SOT539AN flanged balanced ceramic package.

Feature Summary

• Advanced Rugged Technology ensures excellent ruggedness with no device degradation under load mismatch conditions.
• Integrated dual-sided ESD protection enables Class C operation and complete switch-off capability.
• High breakdown voltage supports Class E operation up to 53 V and qualification up to 65 V.
• Designed for broadband operation across the 1 MHz to 400 MHz frequency range.

Applications

• Industrial, scientific and medical applications including plasma generators, MRI systems, CO2 lasers, and particle accelerators.
• Broadcast applications such as FM radio and VHF TV transmission.
• Communications systems including non-cellular communications and UHF radar.

Procurement Notes

Verify the specific ordering suffix 'U' corresponds to the SOT539AN package variant when sourcing. Confirm RoHS compliance status via official Ampleon product details pages prior to procurement. Ensure handling procedures adhere to ESD sensitivity classifications C2A and HBM Class 2 to prevent device damage during assembly and testing.

Selection Notes

Select this component for high-power broadband applications requiring robust performance in ISM, broadcast, and communication bands. Evaluate thermal resistance characteristics and transient thermal impedance curves for heat sink design. Consider the device's ability to withstand VSWR ≥ 65:1 through all phases for demanding operational environments.

Part Context

The ART2K0FEU belongs to the ART series of power LDMOS transistors manufactured by Ampleon. This series utilizes Advanced Rugged Technology to provide enhanced durability compared to standard LDMOS devices. The part shares core specifications with the ART2K0FES and ART2K0FEG variants, differing primarily in packaging configuration and pinout arrangement.

Replacement Considerations

Direct replacements within the same family include ART2K0FES and ART2K0FEG. Verify package compatibility (SOT539AN vs SOT539BN vs SOT1248C) and pin assignments before substitution. Electrical performance remains consistent across these variants, but mechanical integration requires careful assessment of mounting hole patterns and lead configurations.