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The ART150PEXY is a 150 W LDMOS RF transistor based on Advanced Rugged Technology, designed for ISM, broadcast, and communications applications across 1 MHz to 650 MHz. It features an N-Channel configuration with a drain-source breakdown voltage of 203 V (min) and qualified up to 65 V operation. The device exhibits a typical power gain of 31.2 dB at 150 W output and 75.3% drain efficiency at 108 MHz. Packaged in a TO-270-2F-1 surface-mount format, it supports Class EF2 generator circuits and includes integrated dual-sided ESD protection.
Verify the specific ordering suffix against the manufacturer's current data sheet to confirm package type and packing quantity. The ART150PEXY designation corresponds to the TO-270-2F-1 package in a TR7 dry pack configuration. Confirm RoHS compliance status directly with the supplier or official documentation prior to procurement.
Select this component for designs requiring high ruggedness and broadband performance between 1 MHz and 650 MHz. Ensure the application circuit can handle the specified junction temperature limits and provides adequate heat sinking for the exposed heatsink package. Verify impedance matching networks align with the typical Zi and ZL values provided in the datasheet for optimal power transfer.
This part belongs to Ampleon's ART series of power LDMOS transistors. The ART150PEXY variant specifically utilizes the TO-270-2F-1 package outline, distinguishing it from the ART150PEG family which uses the TO-270-2G-1 package. Both variants share identical electrical characteristics but differ in physical pinning and mechanical dimensions.
The ART150PEGXY serves as the primary alternative within the same product family, offering identical electrical specifications but utilizing the TO-270-2G-1 package. Designers must verify pinout compatibility and mechanical footprint differences before substituting one for the other.