SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ART2K5TFUGJ is a 2500 W LDMOS RF power transistor based on Advanced Rugged Technology (ART), designed for ISM, broadcast, and communications applications across 1 MHz to 400 MHz. It features dual sections with a drain-source voltage rating of 200 V and a junction temperature limit of 225 °C. At 108 MHz with pulsed operation (tp=100 µs, δ=10%), it delivers 2500 W output power with 76% drain efficiency and 29.5 dB gain. The device includes an integrated thermal sensor FET for die temperature monitoring and dual-sided ESD protection.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package variant selection. Confirm that the intended application environment complies with the specified operating temperature ranges and ESD handling precautions outlined in the product data sheet. Ensure design safeguards are implemented to minimize risks associated with high-power RF operation.
Select this component for high-power broadband applications requiring robust performance in the 1 MHz to 400 MHz range. Consider the ACC-1230-6G-2 earless flanged ceramic package for mounting requirements. Evaluate the thermal resistance characteristics and junction temperature limits to ensure adequate heat dissipation solutions are in place for continuous or pulsed duty cycles.
The ART2K5TFUGJ belongs to Ampleon's ART series of LDMOS power transistors, which are engineered for high reliability and ruggedness. This series supports demanding environments in industrial, broadcast, and communication sectors. The device shares architectural similarities with other ART family members but is optimized for 2500 W output power capabilities within its specific frequency band.
The ART2K5TFUSJ is the primary alternative within the same datasheet, sharing identical electrical specifications and pinout configuration. Both variants utilize the ACC-1230 package family. Verify package-specific mechanical differences if direct substitution is required.