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The ART1K6PHY is a dual N-channel LDMOS RF power transistor based on Advanced Rugged Technology (ART). It delivers 1600 W output power at 55 V and operates from 1 MHz to 450 MHz. Key electrical parameters include a drain-source breakdown voltage of 177 V, gate-source voltage limits of -9 V to +13 V, and a junction temperature rating up to 225 °C. The device features an on-state resistance of 84 mΩ and a typical power gain of 27.3 dB at 108 MHz. Packaged in the OMP-1230-4F-1 format with TR13 dry pack shipping.
Verify the specific ordering suffix 'Y' corresponds to the TR13 packing description when sourcing. Confirm RoHS compliance status through official Ampleon channels prior to integration. Ensure handling procedures meet ESD sensitivity requirements specified in the datasheet. Validate that the OMP-1230-4F-1 package outline matches the target PCB footprint design constraints.
Select this component for high-power applications requiring robust performance in the 1 MHz to 450 MHz range. The device supports multiple supply voltages including 50 V and 55 V. Consider the thermal resistance characteristics for heat sink design. Verify compatibility with Class AB or Class E amplifier topologies based on the required efficiency and linearity specifications.
This part belongs to the ART1K6PH family manufactured by Ampleon. It utilizes Laterally Diffused Metal-Oxide Semiconductor (LDMOS) technology optimized for industrial, scientific, and medical (ISM) frequencies. The product line emphasizes high efficiency and thermal stability for demanding RF power environments.
The ART1K6PHG variant serves as a functional alternative within the same family. Both share identical electrical specifications but differ in package type. Ensure the replacement package fits the mechanical constraints of the existing assembly before substitution.