ART2K5TFUSJ

Overview

The ART2K5TFUSJ is a 2500 W LDMOS RF power transistor based on Advanced Rugged Technology (ART). It operates within a frequency range of 1 MHz to 400 MHz and is qualified for VDS = 75 V. The device features an integrated thermal sensor and dual-sided ESD protection, supporting Class C operation. Key electrical parameters include a drain-source breakdown voltage of 203 V minimum, a gate-source threshold voltage of 2.1 V typical, and a junction-to-case thermal resistance of 0.077 K/W. At 108 MHz with pulsed RF conditions (tp=100 µs, δ=10%), it delivers 2500 W output power with 29.8 dB gain and 74% drain efficiency.

Feature Summary

• Advanced Rugged Technology ensures excellent ruggedness with no device degradation under load mismatch conditions.
• Integrated dual-sided ESD protection enables Class C operation and complete switch-off capability.
• Built-in thermal sense FET allows real-time monitoring of die temperature during operation.
• Designed for broadband operation across the 1 MHz to 400 MHz spectrum.

Applications

• Industrial, scientific and medical applications including plasma generators, MRI systems, CO2 lasers, and particle accelerators
• Broadcast applications such as FM radio and VHF TV transmitters
• Communications systems including non-cellular communications and UHF radar

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package type and packing details. Ensure that design implementations account for the device's sensitivity to electrostatic discharge by adhering to ANSI/ESD S20.20 or equivalent handling standards. Confirm compatibility with the required operating voltage and thermal management solutions before integration.

Selection Notes

Select this component for high-power broadband applications requiring robust performance in ISM, broadcast, and communication sectors. Evaluate the thermal resistance and junction temperature limits to ensure adequate heat dissipation. Consider the integrated thermal sensor for precise temperature monitoring and protection circuits. Verify impedance matching requirements at the target operating frequency to optimize gain and efficiency.

Part Context

The ART2K5TFUSJ belongs to Ampleon's ART series of LDMOS power transistors, designed for high-efficiency and rugged operation. It shares architectural similarities with other devices in the family but offers specific power and frequency characteristics tailored for demanding RF environments. The device utilizes an earless flanged ceramic package suitable for mounting on heatsinks.

Replacement Considerations

Consult official Ampleon documentation for confirmed substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with voltage ratings, thermal characteristics, and pin configurations.