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The ART2K0TFEGJ is an RF LDMOS transistor manufactured by Ampleon USA Inc., designed for high-power radio frequency applications. It features a dual N-channel configuration with a drain-source breakdown voltage of 65 V and a typical on-resistance of 100 mOhms. The device operates within a frequency range of 1 MHz to 400 MHz, delivering an output power of 2000 W with a gain of 29 dB. Packaged in the ACC-1230-6G-2 format, it supports screw mount installation and functions at maximum operating temperatures up to +225°C.
Verify the specific package suffix (e.g., EGJ) against official Ampleon documentation to ensure mechanical compatibility with your mounting system. Confirm that the required lead time aligns with project schedules, as availability may vary by region. Ensure that handling procedures account for the sensitivity of RF components during storage and assembly to maintain performance integrity.
Select this component when designing systems requiring high output power in the 1–400 MHz range. The 65 V rating suits standard industrial supply voltages. Compare the 100 mOhms on-resistance against thermal constraints to determine heat sink requirements. Evaluate the ACC-1230-6G-2 package dimensions against PCB or chassis layout limitations before finalizing the design.
This part belongs to the ART2K0 series from Ampleon, a leader in RF power solutions established in 2015. The series targets demanding applications in mobile infrastructure and broadcasting. Ampleon leverages decades of RF expertise to provide consistent product performance for global markets, focusing on efficiency and reliability in high-energy transmission environments.
Direct substitutes include other ART2K0 variants with compatible pinouts and electrical ratings, such as ART2K0TFESJ or ART2K0TFEJ. Verify that alternative packages match the mechanical footprint and thermal interface requirements of the existing design.