— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:DIODE ARR SIC 1200V 30A TO247-3
- Series:-
- Mfr:ANBON SEMICONDUCTOR (INT'L) LIMITED
- Package:Bulk
- Diode Configuration:1 Pair Common Cathode
- Technology:SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):1200 V
- Current - Average Rectified (Io) (per Diode):30A (DC)
- Voltage - Forward (Vf) (Max) @ If:1.8 V @ 15 A
- Speed:No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):0 ns
- Current - Reverse Leakage @ Vr:20 µA @ 1200 V
- Operating Temperature - Junction:-55°C ~ 175°C
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Supplier Device Package:TO-247-3
- Grade:-
- Qualification:-
Download product information
Overview
The AS3D020120P2 is a Silicon Carbide Schottky diode manufactured by Anbon Semiconductor. It features a TO-247-3 package with a maximum repetitive peak reverse voltage of 1200 V and a forward current rating of up to 60 A per device at a case temperature of 25°C. The component supports an operating junction temperature range from -55°C to 175°C, ensuring robust thermal performance in high-power applications.
Feature Summary
- Zero reverse recovery current and zero forward recovery voltage for minimal switching losses
- Positive temperature coefficient on forward voltage enabling parallel operation without thermal runaway
- Temperature-independent switching characteristics for stable performance across varying conditions
Applications
- Switch Mode Power Supplies
- Power Factor Correction circuits
- Motor drive systems
- Photovoltaic Inverters
- Wind Power Stations
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging specifications. Ensure that the procurement channel provides valid traceability for the semiconductor batch. Cross-reference the datasheet revision date to confirm compatibility with current design requirements before finalizing orders.
Selection Notes
Select this component for high-voltage applications requiring low switching losses and high thermal stability. The silicon carbide technology allows for reduced heat sink sizes compared to traditional bipolar devices. Evaluate the thermal resistance parameters to ensure adequate cooling solutions are integrated into the system design for optimal efficiency.
Part Context
This part belongs to the AS3D series of silicon carbide Schottky diodes designed for renewable energy and industrial power systems. The series utilizes advanced SiC technology to replace conventional silicon or bipolar devices, offering superior efficiency and reliability in demanding power electronics environments.
Replacement Considerations
Official substitute part numbers are not documented in the provided source material. Verify pinout compatibility and thermal characteristics when considering alternative components from other manufacturers.
ChipApex | Global Electronic Components Supplier








