ASA004V065A4

$1.61

Description：650V 4A, TO220-2L, INDUSTRIAL GR
Series：-
Mfr：Luminus Devices Inc.
Package：Tube

SKU:dde95236fd16 Category: Single Diodes Brand: Luminus Devices Inc.

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Product introduction

Product Detailed Parameters

Description：650V 4A, TO220-2L, INDUSTRIAL GR
Series：-
Mfr：Luminus Devices Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：15A
Voltage - Forward (Vf) (Max) @ If：1.45 V @ 4 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：24 µA @ 650 V
Capacitance @ Vr, F：231pF @ 0V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-220-2
Supplier Device Package：TO-220-2L
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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ASA004V065A4

Overview

The ASA004V065A4 is a silicon carbide (SiC) Schottky diode manufactured by APC-E, distributed under the Luminus Devices Inc. catalog identifier. This single-configuration component features a 650 V repetitive reverse voltage rating and supports a continuous forward current of 4 A. It accommodates a forward surge current of 32 A and operates at maximum temperatures up to +175°C. The device utilizes a TO-220-2L through-hole package for industrial-grade applications.

Feature Summary

Utilizes silicon carbide semiconductor material for high thermal stability
Features Schottky barrier construction for low forward voltage drop
Designed for industrial-grade reliability in harsh environments

Applications

Industrial power conversion systems
High-temperature rectification circuits
General-purpose switching power supplies

Procurement Notes

Verify the manufacturer designation carefully, as official documentation identifies APC-E as the producer while distributor listings may associate the part with Luminus Devices Inc. Confirm the specific datasheet version to ensure alignment between the 4 A and 15 A ratings found in different sources. Ensure the TO-220-2L package matches your board layout requirements before finalizing procurement orders.

Selection Notes

Select this component when high-temperature operation exceeding standard silicon limits is required. The SiC technology offers superior performance in high-voltage scenarios compared to traditional materials. Evaluate the thermal management needs for the TO-220-2L package to ensure the system can handle the specified junction temperature limits effectively during continuous operation.

Part Context

This component belongs to the category of wide-bandgap power semiconductors. Silicon carbide diodes are distinct from standard silicon devices due to their ability to operate at higher voltages and temperatures with reduced energy loss. The classification indicates its role in modern efficient power electronics rather than low-power signal processing.