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ASZD020120C
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Product Detailed Parameters
- Description：1200V,20A SILICON CARBIDE SCHOTT
- Series：*
- Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Voltage - DC Reverse (Vr) (Max)：-
- Current - Average Rectified (Io)：-
- Voltage - Forward (Vf) (Max) @ If：-
- Speed：-
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：-
- Capacitance @ Vr, F：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Operating Temperature - Junction：-
- Grade：-
- Qualification：-
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Overview
The ASZD020120C is a silicon carbide Schottky diode manufactured by Anbon Semiconductor. It utilizes advanced SiC technology to deliver high-efficiency performance suitable for next-generation power systems. The device is designed to improve system efficiency and reduce power loss in demanding applications. It features fast response characteristics, low clamping voltage, and low leakage current, making it ideal for high-frequency switching environments. The component supports renewable energy, AI server power, and electric vehicle charging infrastructure.
Feature Summary
- High-efficiency silicon carbide construction for reduced power loss
- Fast response time with low clamping voltage
- Low leakage current for improved system reliability
- Compact package design for high-density applications
Applications
- Solar inverters
- Energy storage systems
- EV chargers
- Industrial power supplies
- Server power supplies
Procurement Notes
Verify the specific part number ASZD020120C against official Anbon Semiconductor documentation to confirm exact electrical ratings and package details. Ensure compatibility with intended thermal management and circuit requirements. Cross-reference with authorized distributors for genuine product sourcing. Confirm RoHS compliance status if required by project specifications. Validate that the component meets automotive or industrial qualification standards as needed.
Selection Notes
Select this component for applications requiring high-frequency switching and high-temperature operation. Consider its suitability for PFC circuits and high-efficiency DC/DC converters. Evaluate thermal performance based on the specific TO-3P or similar package constraints. Compare against standard silicon alternatives for efficiency gains in solar and EV charging systems. Ensure voltage and current ratings align with system peak loads.
Part Context
Anbon Semiconductor specializes in vertically integrated power semiconductor manufacturing. The company focuses on SiC solutions for automotive, industrial, and renewable energy markets. This diode is part of their broader portfolio aimed at driving mobility and sustainable energy technologies. The brand emphasizes innovation in high-efficiency power devices for next-generation systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Anbon Semiconductor documentation for direct replacements or pin-compatible alternatives.
