AT-31011-BLKG

Overview

The AT-31011-BLKG is a silicon NPN RF bipolar transistor designed for low current applications. It features a maximum collector-emitter voltage (Vceo) of 5.5 V and an emitter-base voltage (Vebo) of 1.5 V. The device supports a continuous collector current of 16 mA with a minimum DC current gain (hFE) of 70. It operates at frequencies up to 30 GHz and functions within a temperature range of -65°C to +150°C.

Feature Summary

• Optimized for high-performance operation in low current RF circuits
• Designed for surface mount installation using SOT-143 packaging
• Engineered for stable performance across wide temperature ranges

Applications

• RF amplifier stages requiring low current drive
• High-frequency signal processing circuits
• Wireless communication module components

Procurement Notes

This component has been officially declared obsolete by Broadcom Limited. Verification of availability should focus on existing stock or authorized surplus channels, as new production has ceased. Confirm RoHS compliance status through official documentation before integration into designs.

Selection Notes

Select this part only if the design specifically requires the 5.5 V breakdown voltage and 16 mA current limit characteristics. Ensure the application frequency aligns with the 30 GHz specification. Consider that obsolescence may impact long-term supply chain stability for production runs.

Part Context

The AT-31011-BLKG belongs to the Agilent/Broadcom family of low-current, high-performance NPN silicon bipolar transistors. It shares design optimizations with related models like the AT-31033 but is distinct in its specific current and voltage ratings tailored for compact RF applications.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Due to the obsolete status, direct replacements must be identified through independent engineering analysis of pinout and electrical parameters.